Transport in the surface channel of strained Si on a relaxed Si_{1 - x}Ge_x substrate

Chemical Compounds

• Interface Trap 91%
• Optical Phonon 87%
• Compound Mobility 84%
• Subband 79%
• Strain 77%
• Tight Binding Model 73%
• Electron Mobility 65%
• Surface Roughness 55%
• Electron Transport 53%
• Charge Density 53%
• Electric Field 49%
• Buffer Solution 35%
• Surface 35%
• Reduction 25%
• Time 19%

Engineering & Materials Science

• Phonon scattering 100%
• Inversion layers 96%
• Electron Transport 88%
• Electron mobility 86%
• Substrates 77%
• Charge density 77%
• Green's function 64%
• Scattering 52%
• Electric fields 50%
• Oxides 47%
• Capacitance 47%
• Surface roughness 45%

Physics & Astronomy

• inversions 89%
• time functions 70%
• electron mobility 56%
• scattering 56%
• depletion 48%
• surface roughness 46%
• buffers 46%
• Green's functions 46%
• capacitance 44%
• traps 41%
• formalism 39%
• phonons 37%
• oxides 34%
• augmentation 33%
• electric fields 32%
• coefficients 29%
• electrons 23%