Abstract

A real time Green's functions formalism is used to study the electron transport in a uniformly-doped strained-Si surface channel on a relaxed Si1-xGex buffer. Our theoretical mobility results, for Ns = 1012 cm-2 and for several Ge concentrations in the substrate, are in good agreement with the available experimental data. We find that the low-field electron mobility is affected strongly by rather high fixed-oxide charge, interface-trap and surface-roughness scattering, in addition to non-polar optical phonon scattering. Significant mobility enhancement with increasing Ge fraction in the substrate is observed only for low values of Ns. The weighting coefficients a and b for the inversion and depletion charge densities in the definition of the effective transverse electric field Eeff are not found to be considerably affected by the strain. Strain induced increase of the population of the higher lying sub-bands from the Δ2-band leads to a reduction of the inversion layer capacitance Cinv.

Original languageEnglish (US)
Pages (from-to)879-885
Number of pages7
JournalSolid-State Electronics
Volume41
Issue number6
StatePublished - Jun 1997

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inversions
Inversion layers
Phonon scattering
time functions
Electron mobility
Substrates
Charge density
scattering
electron mobility
Green's function
Oxides
Buffers
surface roughness
depletion
Capacitance
Green's functions
buffers
Surface roughness
capacitance
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Transport in the surface channel of strained Si on a relaxed Si1 - xGex substrate. / Formicone, G. F.; Vasileska, Dragica; Ferry, D. K.

In: Solid-State Electronics, Vol. 41, No. 6, 06.1997, p. 879-885.

Research output: Contribution to journalArticle

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