Authors review charge transport in submicrometer devices. The transport physics introduces a variety of time and space scales, all of which are related to the validity of various approximations. Here authors consider several issues. First, they examine electron transport in small regions of a semiconductor device. They find that the model of carrier transport that is virtually universally used in semiconductor device modeling fails in sufficiently small regions. In Si, however, these regions are so small that other mechanisms will probably prevent the scaling of present day technology to such levels. This is not the case in the III-V materials, such as GaAs and InP, and the possibility of significant overshoot velocity must be considered, while the impact of the quicker transit time that arises from this effect produces higher drive currents from the device. Authors examine this further.
|Original language||English (US)|
|Place of Publication||Orlando, FL, USA|
|Publisher||Academic Press Inc|
|Number of pages||20|
|State||Published - 1985|
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