TRANSPORT IN SUBMICROMETER DEVICES.

D. K. Ferry, R. O. Grondin

Research output: Book/ReportBook

Abstract

Authors review charge transport in submicrometer devices. The transport physics introduces a variety of time and space scales, all of which are related to the validity of various approximations. Here authors consider several issues. First, they examine electron transport in small regions of a semiconductor device. They find that the model of carrier transport that is virtually universally used in semiconductor device modeling fails in sufficiently small regions. In Si, however, these regions are so small that other mechanisms will probably prevent the scaling of present day technology to such levels. This is not the case in the III-V materials, such as GaAs and InP, and the possibility of significant overshoot velocity must be considered, while the impact of the quicker transit time that arises from this effect produces higher drive currents from the device. Authors examine this further.

Original languageEnglish (US)
Place of PublicationOrlando, FL, USA
PublisherAcademic Press Inc
Number of pages20
ISBN (Print)0122341090
StatePublished - 1985

Fingerprint

Semiconductor device models
Carrier transport
Semiconductor devices
Charge transfer
Physics
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ferry, D. K., & Grondin, R. O. (1985). TRANSPORT IN SUBMICROMETER DEVICES. Orlando, FL, USA: Academic Press Inc.

TRANSPORT IN SUBMICROMETER DEVICES. / Ferry, D. K.; Grondin, R. O.

Orlando, FL, USA : Academic Press Inc, 1985. 20 p.

Research output: Book/ReportBook

Ferry, DK & Grondin, RO 1985, TRANSPORT IN SUBMICROMETER DEVICES. Academic Press Inc, Orlando, FL, USA.
Ferry DK, Grondin RO. TRANSPORT IN SUBMICROMETER DEVICES. Orlando, FL, USA: Academic Press Inc, 1985. 20 p.
Ferry, D. K. ; Grondin, R. O. / TRANSPORT IN SUBMICROMETER DEVICES. Orlando, FL, USA : Academic Press Inc, 1985. 20 p.
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