Transport in split gate MOS quantum dot structures

Stephen Goodnick, J. Bird, D. K. Ferry, A. D. Gunther, M. D. Khoury, Michael Kozicki, M. J. Rack, Trevor Thornton, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Great Lakes Symposium on VLSI
PublisherIEEE
Pages394-396
Number of pages3
ISBN (Print)0769501044
StatePublished - Dec 1 1999
EventProceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99) - Ann Arbor, MI, USA
Duration: Mar 4 1999Mar 6 1999

Publication series

NameProceedings of the IEEE Great Lakes Symposium on VLSI
ISSN (Print)1066-1395

Other

OtherProceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99)
CityAnn Arbor, MI, USA
Period3/4/993/6/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Goodnick, S., Bird, J., Ferry, D. K., Gunther, A. D., Khoury, M. D., Kozicki, M., Rack, M. J., Thornton, T., & Vasileska, D. (1999). Transport in split gate MOS quantum dot structures. In Proceedings of the IEEE Great Lakes Symposium on VLSI (pp. 394-396). (Proceedings of the IEEE Great Lakes Symposium on VLSI). IEEE.