We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.
|Original language||English (US)|
|Title of host publication||IEEE Nanotechnology Magazine|
|Number of pages||8|
|State||Published - 2012|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering