Transport in graphene: Studying layers of BN, SiC, and SiO2

D. K. Ferry

doi:10.1109/MNANO.2012.2220233

Transport in graphene: Studying layers of BN, SiC, and SiO₂

D. K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO₂). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.

Original language	English (US)
Title of host publication	IEEE Nanotechnology Magazine
Pages	18-25
Number of pages	8
Volume	6
Edition	4
DOIs	https://doi.org/10.1109/MNANO.2012.2220233
State	Published - 2012

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

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10.1109/MNANO.2012.2220233

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abstract = "We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.",

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Transport in graphene: Studying layers of BN, SiC, and SiO₂

Abstract

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