Transport in graphene

Studying layers of BN, SiC, and SiO2

D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as flexural modes, but it is the remote polar modes from the substrate and impurities sited between the substrate layer and graphene that dominate the mobility and velocity.

Original languageEnglish (US)
Title of host publicationIEEE Nanotechnology Magazine
Pages18-25
Number of pages8
Volume6
Edition4
DOIs
StatePublished - 2012

Fingerprint

Boron nitride
Silicon carbide
Graphene
Substrates
Phonons
Silica
Impurities

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

Ferry, D. K. (2012). Transport in graphene: Studying layers of BN, SiC, and SiO2. In IEEE Nanotechnology Magazine (4 ed., Vol. 6, pp. 18-25). [6374651] https://doi.org/10.1109/MNANO.2012.2220233

Transport in graphene : Studying layers of BN, SiC, and SiO2. / Ferry, D. K.

IEEE Nanotechnology Magazine. Vol. 6 4. ed. 2012. p. 18-25 6374651.

Research output: Chapter in Book/Report/Conference proceedingChapter

Ferry, DK 2012, Transport in graphene: Studying layers of BN, SiC, and SiO2. in IEEE Nanotechnology Magazine. 4 edn, vol. 6, 6374651, pp. 18-25. https://doi.org/10.1109/MNANO.2012.2220233
Ferry DK. Transport in graphene: Studying layers of BN, SiC, and SiO2. In IEEE Nanotechnology Magazine. 4 ed. Vol. 6. 2012. p. 18-25. 6374651 https://doi.org/10.1109/MNANO.2012.2220233
Ferry, D. K. / Transport in graphene : Studying layers of BN, SiC, and SiO2. IEEE Nanotechnology Magazine. Vol. 6 4. ed. 2012. pp. 18-25
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