Transport in AlxGa1-xAs/InyGa1-yAs resonant tunnelling diodes with asymmetric layers

Hyungmo Yoo, Stephen M. Goodnick, John R. Arthur

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

AlxGa1-xAs/InyGa1-yAs resonant tunnelling diodes (RTDs) grown by molecular beam epitaxy with symmetric and asymmetric spacer layers have been fabricated and studied by electric and magnetic field measurements. Pseudomorphic (pm) Al0.35 Ga0.65As/In0.1Ga0.9As RTDs with asymmetric spacer layers exhibit novel tunneling phenomena depending upon the bias direction. Tunneling is through the ground state energy of the In0.1Ga0.9As well when the thick spacer layer is in the leading edge of the device while it is through the first excited state of the In0.1Ga0.9As well when the thick spacer layer is in the trailing edge of the diode. Shubnikov-DeHaas oscillations obtained from the pm-RTDs of asymmetric spacer layers also show different features depending upon the bias direction. Improved device performance is observed when a thick spacer layer is on the substrate side rather than the top contact side, which is evidence of silicon dopant atom outdiffusion during molecular beam epitaxial growth.

Original languageEnglish (US)
Pages (from-to)1095-1099
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
StatePublished - May 2 1991
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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