TY - JOUR
T1 - Transport in AlxGa1-xAs/InyGa1-yAs resonant tunnelling diodes with asymmetric layers
AU - Yoo, Hyungmo
AU - Goodnick, Stephen M.
AU - Arthur, John R.
N1 - Funding Information:
The authors would like to express their thanks to L. Ungier, J. Lary, and Dr. J. Wager for useful discussions related to the work, and to S.B. Kim for the deposition of the plasma enhanced chemical vapor deposition oxide. They acknowledge partial support from Office of Naval Research contract No. N00014-89-J-1894.
PY - 1991/5/2
Y1 - 1991/5/2
N2 - AlxGa1-xAs/InyGa1-yAs resonant tunnelling diodes (RTDs) grown by molecular beam epitaxy with symmetric and asymmetric spacer layers have been fabricated and studied by electric and magnetic field measurements. Pseudomorphic (pm) Al0.35 Ga0.65As/In0.1Ga0.9As RTDs with asymmetric spacer layers exhibit novel tunneling phenomena depending upon the bias direction. Tunneling is through the ground state energy of the In0.1Ga0.9As well when the thick spacer layer is in the leading edge of the device while it is through the first excited state of the In0.1Ga0.9As well when the thick spacer layer is in the trailing edge of the diode. Shubnikov-DeHaas oscillations obtained from the pm-RTDs of asymmetric spacer layers also show different features depending upon the bias direction. Improved device performance is observed when a thick spacer layer is on the substrate side rather than the top contact side, which is evidence of silicon dopant atom outdiffusion during molecular beam epitaxial growth.
AB - AlxGa1-xAs/InyGa1-yAs resonant tunnelling diodes (RTDs) grown by molecular beam epitaxy with symmetric and asymmetric spacer layers have been fabricated and studied by electric and magnetic field measurements. Pseudomorphic (pm) Al0.35 Ga0.65As/In0.1Ga0.9As RTDs with asymmetric spacer layers exhibit novel tunneling phenomena depending upon the bias direction. Tunneling is through the ground state energy of the In0.1Ga0.9As well when the thick spacer layer is in the leading edge of the device while it is through the first excited state of the In0.1Ga0.9As well when the thick spacer layer is in the trailing edge of the diode. Shubnikov-DeHaas oscillations obtained from the pm-RTDs of asymmetric spacer layers also show different features depending upon the bias direction. Improved device performance is observed when a thick spacer layer is on the substrate side rather than the top contact side, which is evidence of silicon dopant atom outdiffusion during molecular beam epitaxial growth.
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U2 - 10.1016/0022-0248(91)91140-6
DO - 10.1016/0022-0248(91)91140-6
M3 - Article
AN - SCOPUS:0026413116
SN - 0022-0248
VL - 111
SP - 1095
EP - 1099
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -