TY - JOUR
T1 - Transmission electron microscopy of the AlN-SiC interface
AU - Ponce, F. A.
AU - O’Keefe, M. A.
AU - Nelson, E. C.
N1 - Funding Information:
ACKNOWLEDGEMENTS This work was partially supported by Department of Commerce Advanced Technology Program (70NANB2H 124 I), and by the Advanced Research Projects Agency (MDA972-95-3-0008). The authors gratefully acknowledge the use of the atomic resolution microscope at the National Center for Electron Microscopy, Lawrence-Berkeley National Laboratory, a National User Centre supported by the US Department of Energy under Contract No. DE-AC03-76SF00098.
PY - 1996/9
Y1 - 1996/9
N2 - The AlN-SiC interface has been studied using high-resolution transmission electron microscopy. Cross-section lattice images of the AlN-SiC interface have been analysed to establish the connection between image contrast and the atomic positions in the lattice. Assuming atomically abrupt and planar AlN-SiC interfaces, four possible atomic bonding configurations are taken into account for SiC substrates with the (0001)Si orientation. Image simulations of these four interface models are compared with the experimental images. Considering variations at the interface of the image contrast, the basal-plane distance and the projected charge density, it is shown that the C-Al and Si-N bonds are in agreement with the experimental images and are not distinguishable under our experimental conditions. The other two possibilities, involving C-N and Si Al bonds, are not consistent with our observations.
AB - The AlN-SiC interface has been studied using high-resolution transmission electron microscopy. Cross-section lattice images of the AlN-SiC interface have been analysed to establish the connection between image contrast and the atomic positions in the lattice. Assuming atomically abrupt and planar AlN-SiC interfaces, four possible atomic bonding configurations are taken into account for SiC substrates with the (0001)Si orientation. Image simulations of these four interface models are compared with the experimental images. Considering variations at the interface of the image contrast, the basal-plane distance and the projected charge density, it is shown that the C-Al and Si-N bonds are in agreement with the experimental images and are not distinguishable under our experimental conditions. The other two possibilities, involving C-N and Si Al bonds, are not consistent with our observations.
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U2 - 10.1080/01418619608243541
DO - 10.1080/01418619608243541
M3 - Article
AN - SCOPUS:0030237629
SN - 0141-8610
VL - 74
SP - 777
EP - 789
JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
IS - 3
ER -