Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs

R. J. Graham, John Spence, R. J. Roedel

Research output: Contribution to journalArticle

Abstract

Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.

Original languageEnglish (US)
Pages (from-to)164-167
Number of pages4
JournalJournal of Applied Physics
Volume59
Issue number1
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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