Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs

R. J. Graham; John Spence; R. J. Roedel

doi:10.1063/1.336855

Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs

R. J. Graham, John Spence, R. J. Roedel

Physics

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Abstract

Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.

Original language	English (US)
Pages (from-to)	164-167
Number of pages	4
Journal	Journal of Applied Physics
Volume	59
Issue number	1
DOIs	https://doi.org/10.1063/1.336855
State	Published - Dec 1 1986

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title = "Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs",

abstract = "Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.",

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AU - Graham, R. J.

AU - Spence, John

AU - Roedel, R. J.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.

AB - Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.

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Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs

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