Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Dec 1 1986|
ASJC Scopus subject areas
- Physics and Astronomy(all)