The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Sep 1988|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering