Transient Switching Behavior of the Resonant-Tunneling Diode

N. C. Kluksdahl, A. M. Kriman, David K. Ferry, Christian Ringhofer

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.

Original languageEnglish (US)
Pages (from-to)457-459
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number9
DOIs
StatePublished - Sep 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Transient Switching Behavior of the Resonant-Tunneling Diode'. Together they form a unique fingerprint.

Cite this