Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Original languageEnglish (US)
Pages (from-to)3575-3577
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number23
DOIs
StatePublished - Dec 2 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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