Abstract
Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Place of Publication | Amsterdam, Neth |
| Publisher | North-Holland Publ Co |
| Pages | 147-155 |
| Number of pages | 9 |
| State | Published - 1978 |
| Externally published | Yes |
| Event | Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd - Berchtesgaden, Ger Duration: Aug 19 1977 → Aug 22 1977 |
Other
| Other | Proc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd |
|---|---|
| City | Berchtesgaden, Ger |
| Period | 8/19/77 → 8/22/77 |
ASJC Scopus subject areas
- General Engineering