TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS.

P. Das, D. K. Ferry, A. H. Barr

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Recent calculations of hot electron microwave conductivities of quasi-two-dinensional silicon 100-direction samples at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency and a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, transient response solutions to the electron transport for both large-signal and small-signal conditions were carried out. The results of these calculations for electrons in a 100-direction inversion layer are reported. The response of the electron gas to a large dc field step and a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
Place of PublicationAmsterdam, Neth
PublisherNorth-Holland Publ Co
Pages147-155
Number of pages9
StatePublished - 1978
Externally publishedYes
EventProc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd - Berchtesgaden, Ger
Duration: Aug 19 1977Aug 22 1977

Other

OtherProc of the Int Conf on the Electron Prop of Two-Dimens Syst, 2nd
CityBerchtesgaden, Ger
Period8/19/778/22/77

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Das, P., Ferry, D. K., & Barr, A. H. (1978). TRANSIENT RESPONSE OF QUASI-TWO-DIMENSIONAL SEMICONDUCTORS UNDER HOT ELECTRON CONDITIONS. In Unknown Host Publication Title (pp. 147-155). North-Holland Publ Co.