Transient response exploration of SRAM cell metastable states caused by ionizing radiation with 3D mixed mode simulation

A. Privat, L. T. Clark, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper reports on the simulation and experimental results examining the interaction between mismatch and soft-errors in SRAM cells. Multiple bit upsets (MBU) due to ion irradiation are measured and show a significant probability of not upsetting otherwise identical cells, including the stored state. In order to understand this behavior, we use 3D device simulations and show that they may be due to the cells being driven metastable by radiation induced collected charge, whence the final state is strongly determined by the circuit mismatch within the cell.

Original languageEnglish (US)
Title of host publication2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages443-446
Number of pages4
ISBN (Electronic)9781479942428
DOIs
StatePublished - 2014
Event2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 - Marseille, France
Duration: Dec 7 2014Dec 10 2014

Publication series

Name2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014

Other

Other2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
Country/TerritoryFrance
CityMarseille
Period12/7/1412/10/14

Keywords

  • 3D simulation
  • Ionizing particle
  • Meta-stable state
  • Mismatch
  • Multiple Bit Upset
  • SRAM

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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