TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.

H. L. Grubin, D. K. Ferry, J. R. Barker, M. A. Littlejohn, T. H. Glisson, J. R. Hauser

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.

Original languageEnglish (US)
Title of host publicationProceedings - Biennial Cornell Electrical Engineering Conference
Place of PublicationIthaca, NY
PublisherCornell Univ Sch of Electr Eng (v 7)
Pages413-422
Number of pages10
StatePublished - 1979
Externally publishedYes
EventProc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits - Ithaca, NY, USA
Duration: Aug 14 1979Aug 16 1979

Other

OtherProc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits
CityIthaca, NY, USA
Period8/14/798/16/79

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Grubin, H. L., Ferry, D. K., Barker, J. R., Littlejohn, M. A., Glisson, T. H., & Hauser, J. R. (1979). TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES. In Proceedings - Biennial Cornell Electrical Engineering Conference (pp. 413-422). Cornell Univ Sch of Electr Eng (v 7).