TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.

H. L. Grubin; D. K. Ferry; J. R. Barker; M. A. Littlejohn; T. H. Glisson; J. R. Hauser

TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.

H. L. Grubin, D. K. Ferry, J. R. Barker, M. A. Littlejohn, T. H. Glisson, J. R. Hauser

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.

Original language	English (US)
Title of host publication	Proceedings - Biennial Cornell Electrical Engineering Conference
Place of Publication	Ithaca, NY
Publisher	Cornell Univ Sch of Electr Eng (v 7)
Pages	413-422
Number of pages	10
State	Published - 1979
Externally published	Yes
Event	Proc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits - Ithaca, NY, USA Duration: Aug 14 1979 → Aug 16 1979

Other

Other	Proc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits
City	Ithaca, NY, USA
Period	8/14/79 → 8/16/79

ASJC Scopus subject areas

Engineering(all)

Cite this

Grubin, HL, Ferry, DK, Barker, JR, Littlejohn, MA, Glisson, TH & Hauser, JR 1979, TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES. in Proceedings - Biennial Cornell Electrical Engineering Conference. Cornell Univ Sch of Electr Eng (v 7), Ithaca, NY, pp. 413-422, Proc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits, Ithaca, NY, USA, 8/14/79.

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title = "TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.",

abstract = "The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.",

author = "Grubin, {H. L.} and Ferry, {D. K.} and Barker, {J. R.} and Littlejohn, {M. A.} and Glisson, {T. H.} and Hauser, {J. R.}",

year = "1979",

language = "English (US)",

pages = "413--422",

booktitle = "Proceedings - Biennial Cornell Electrical Engineering Conference",

publisher = "Cornell Univ Sch of Electr Eng (v 7)",

note = "Proc Bienn Cornell Electr Eng Conf 7th, Act Microwave Semicond Devices and Circuits ; Conference date: 14-08-1979 Through 16-08-1979",

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T1 - TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.

AU - Grubin, H. L.

AU - Ferry, D. K.

AU - Barker, J. R.

AU - Littlejohn, M. A.

AU - Glisson, T. H.

AU - Hauser, J. R.

PY - 1979

Y1 - 1979

N2 - The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.

AB - The purpose of the study is to highlight several new features associated with the transient behavior of electrons in GaAs. Particular emphasis was on overshoot in the satellite valley where its origin was due primarily to the onset of electron transfer. A similar type of overshoot may be expected to be associated with the central valley at very high bias levels. In the latter case the central valley is almost depleted of free carriers and a decrease in bias will result in a transfer of carriers from the satellite to central valley with resulting repopulation overshoot effects. Also discussed are the consequences of finite quantum transition times on the transient behavior of carriers in GaAs. It is shown that the effect of a finite transition time is to increase the scattering rates and hence reduce the response times of the carriers.

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Y2 - 14 August 1979 through 16 August 1979

ER -

TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES.

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