Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, Kong-Thon Tsen, O. F. Sankey, S. E. Günçer, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

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Abstract

High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies Latin small letter h with strokeω=1.951 and 1.92 eV, as the injected electron density was increased from n=1017 to 1018 cm-3, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy Latin small letter h with strokeω was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=1018 cm-3. All of these experimental results were compared with ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1631-1641
Number of pages11
JournalPhysical Review B
Volume51
Issue number3
DOIs
StatePublished - Jan 1 1995

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Grann, E. D., Sheih, S. J., Tsen, K-T., Sankey, O. F., Günçer, S. E., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1995). Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors. Physical Review B, 51(3), 1631-1641. https://doi.org/10.1103/PhysRevB.51.1631