Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, Kong-Thon Tsen, O. F. Sankey, S. E. Günçer, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies Latin small letter h with strokeω=1.951 and 1.92 eV, as the injected electron density was increased from n=1017 to 1018 cm-3, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy Latin small letter h with strokeω was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=1018 cm-3. All of these experimental results were compared with ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1631-1641
Number of pages11
JournalPhysical Review B
Volume51
Issue number3
DOIs
StatePublished - 1995

Fingerprint

electron distribution
Nanostructures
distribution functions
Semiconductor materials
strokes
Electrons
photons
Distribution functions
Carrier concentration
Photons
electrons
electric fields
Electric fields
energy
Raman spectroscopy
excitation
gallium arsenide
Electron Transport

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors. / Grann, E. D.; Sheih, S. J.; Tsen, Kong-Thon; Sankey, O. F.; Günçer, S. E.; Ferry, D. K.; Salvador, A.; Botcharev, A.; Morkoc, H.

In: Physical Review B, Vol. 51, No. 3, 1995, p. 1631-1641.

Research output: Contribution to journalArticle

Grann, ED, Sheih, SJ, Tsen, K-T, Sankey, OF, Günçer, SE, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1995, 'Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors', Physical Review B, vol. 51, no. 3, pp. 1631-1641. https://doi.org/10.1103/PhysRevB.51.1631
Grann, E. D. ; Sheih, S. J. ; Tsen, Kong-Thon ; Sankey, O. F. ; Günçer, S. E. ; Ferry, D. K. ; Salvador, A. ; Botcharev, A. ; Morkoc, H. / Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors. In: Physical Review B. 1995 ; Vol. 51, No. 3. pp. 1631-1641.
@article{29e861713b724cc8bf2f174680577131,
title = "Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors",
abstract = "High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies Latin small letter h with strokeω=1.951 and 1.92 eV, as the injected electron density was increased from n=1017 to 1018 cm-3, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy Latin small letter h with strokeω was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=1018 cm-3. All of these experimental results were compared with ensemble Monte Carlo calculations.",
author = "Grann, {E. D.} and Sheih, {S. J.} and Kong-Thon Tsen and Sankey, {O. F.} and G{\"u}n{\cc}er, {S. E.} and Ferry, {D. K.} and A. Salvador and A. Botcharev and H. Morkoc",
year = "1995",
doi = "10.1103/PhysRevB.51.1631",
language = "English (US)",
volume = "51",
pages = "1631--1641",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors

AU - Grann, E. D.

AU - Sheih, S. J.

AU - Tsen, Kong-Thon

AU - Sankey, O. F.

AU - Günçer, S. E.

AU - Ferry, D. K.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, H.

PY - 1995

Y1 - 1995

N2 - High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies Latin small letter h with strokeω=1.951 and 1.92 eV, as the injected electron density was increased from n=1017 to 1018 cm-3, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy Latin small letter h with strokeω was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=1018 cm-3. All of these experimental results were compared with ensemble Monte Carlo calculations.

AB - High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a function of (1) excitation photon energy, (2) electron density, and (3) electric-field intensity. Our experimental results show that for incident photon energies Latin small letter h with strokeω=1.951 and 1.92 eV, as the injected electron density was increased from n=1017 to 1018 cm-3, the measured drift velocity was found to decrease substantially; on the other hand, the observed electron-distribution function changed from an extremely nonequilibrium one to an almost shifted Fermi-Dirac distribution. When the electric-field intensity E was increased from 15 to 35 kV/cm, the electron-drift velocity did not change significantly. As the incident photon energy Latin small letter h with strokeω was decreased to 1.83 eV, the electron-distribution function remained extremely nonequilibrium even for an injected electron density n=1018 cm-3. All of these experimental results were compared with ensemble Monte Carlo calculations.

UR - http://www.scopus.com/inward/record.url?scp=0000542682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000542682&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.51.1631

DO - 10.1103/PhysRevB.51.1631

M3 - Article

AN - SCOPUS:0000542682

VL - 51

SP - 1631

EP - 1641

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 3

ER -