Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, C. Poweleit, J. M. Barker, D. K. Ferry, H. Morkoc

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the observation of a velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to that of holes. These experimental results have been explained in terms of various carrier scattering processes. Comparisons with results obtained from other III-V semiconductors are also made and a comprehensive discussion is given.

Original languageEnglish (US)
Pages (from-to)1679-1686
Number of pages8
JournalJournal of Physics Condensed Matter
Volume17
Issue number10
DOIs
StatePublished - Mar 16 2005

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure'. Together they form a unique fingerprint.

Cite this