TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON.

S. J. Pennycook, J. Marayan, R. J. Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As** plus implanted Si.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages151-156
Number of pages6
ISBN (Print)0931837014
StatePublished - Dec 1 1985
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume36
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Pennycook, S. J., Marayan, J., & Culbertson, R. J. (1985). TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. In Materials Research Society Symposia Proceedings (pp. 151-156). (Materials Research Society Symposia Proceedings; Vol. 36). Materials Research Soc.