TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON.

S. J. Pennycook, J. Marayan, Robert Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As** plus implanted Si.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages151-156
Number of pages6
Volume36
ISBN (Print)0931837014
StatePublished - 1985
Externally publishedYes

Fingerprint

Silicon
Doping (additives)
Ions
Atoms
Rapid thermal annealing
Epitaxial growth
Ion implantation
Furnaces
Annealing
Crystalline materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Pennycook, S. J., Marayan, J., & Culbertson, R. (1985). TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. In Materials Research Society Symposia Proceedings (Vol. 36, pp. 151-156). Pittsburgh, PA, USA: Materials Research Soc.

TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. / Pennycook, S. J.; Marayan, J.; Culbertson, Robert.

Materials Research Society Symposia Proceedings. Vol. 36 Pittsburgh, PA, USA : Materials Research Soc, 1985. p. 151-156.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pennycook, SJ, Marayan, J & Culbertson, R 1985, TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. in Materials Research Society Symposia Proceedings. vol. 36, Materials Research Soc, Pittsburgh, PA, USA, pp. 151-156.
Pennycook SJ, Marayan J, Culbertson R. TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. In Materials Research Society Symposia Proceedings. Vol. 36. Pittsburgh, PA, USA: Materials Research Soc. 1985. p. 151-156
Pennycook, S. J. ; Marayan, J. ; Culbertson, Robert. / TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON. Materials Research Society Symposia Proceedings. Vol. 36 Pittsburgh, PA, USA : Materials Research Soc, 1985. pp. 151-156
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