TRANSIENT EFFECTS IN SUBMICRON DEVICES - LOAD LINE DEPENDENCE.

H. L. Grubin, D. K. Ferry, J. R. Barker

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

Abstract

Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.

Original languageEnglish (US)
Title of host publicationAdvances in Chemistry Series
Place of PublicationNew York, NY
PublisherIEEE
Pages394-397
Number of pages4
StatePublished - 1979
Externally publishedYes
EventInt Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA
Duration: Dec 3 1979Dec 5 1979

Other

OtherInt Electron Devices Meet, 25th, Tech Dig
CityWashington, DC, USA
Period12/3/7912/5/79

ASJC Scopus subject areas

  • General Engineering

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