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Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model
K. Guetarni, A. D. Touboul, J. Boch, L. Foro, A. Privat, A. Michez, J. R. Vaillé, F. Saigné
Research output: Contribution to journal › Article › peer-review
14
Scopus
citations