Abstract
We present a detailed analysis of the compositional dependence of the average over(E, ̄)1 of the E1 and E1+Δ1 transition energies in Ge1-x-ySixSny alloys. We show that this dependence can be explained in terms of three bowing parameters-bSiGe, bGeSn, and bSiSn-which scale with the product ΔχΔR of the Phillips electronegativity and size mismatches between Si, Ge, and Sn.
Original language | English (US) |
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Pages (from-to) | 309-313 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 138 |
Issue number | 6 |
DOIs | |
State | Published - May 2006 |
Keywords
- A. Semiconductors
- D. Optical properties
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry