Transfer of metal MEMS packages using a wafer-level solder transfer technique

Warren C. Welch; Junseok Chae; Khalil Najafi

doi:10.1109/TADVP.2005.859356

Transfer of metal MEMS packages using a wafer-level solder transfer technique

Warren C. Welch, Junseok Chae, Khalil Najafi

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

This paper presents a modular, low profile, wafer-level encapsulation technology for microelectromechanical systems (MEMS) packaging. Electroplated caps are formed on top of a solder transfer layer previously deposited on a carrier wafer, then simultaneously transferred and bonded to a device wafer by a novel solder transfer method and transient liquid phase (TLP) bonding technology. The solder transfer method is enabled by the dewetting of the solder transfer layer from the carrier wafer and TLP bonding of the cap to the device wafer during bonding. The bond and transfer cycle has a maximum temperature of 300°C and lasts about 2.5 h. This approach has been demonstrated with nickel (Ni) caps as thin as 5 microns, with thicker caps certainly possible, ranging in size from 200 μm to 1 mm. They were transferred with a lead-tin (Pb-Sn) solder layer and bonded with nickel-tin (Ni-Sn) TLP bonding with greater than 99% transfer yield across the wafer.

Original language	English (US)
Pages (from-to)	643-649
Number of pages	7
Journal	IEEE Transactions on Advanced Packaging
Volume	28
Issue number	4
DOIs	https://doi.org/10.1109/TADVP.2005.859356
State	Published - Nov 2005

Keywords

Diffusion soldering
Microelectromechanical systems (MEMS) packaging
Transferred thin-film packaging
Transient liquid phase bonding

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TADVP.2005.859356

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title = "Transfer of metal MEMS packages using a wafer-level solder transfer technique",

abstract = "This paper presents a modular, low profile, wafer-level encapsulation technology for microelectromechanical systems (MEMS) packaging. Electroplated caps are formed on top of a solder transfer layer previously deposited on a carrier wafer, then simultaneously transferred and bonded to a device wafer by a novel solder transfer method and transient liquid phase (TLP) bonding technology. The solder transfer method is enabled by the dewetting of the solder transfer layer from the carrier wafer and TLP bonding of the cap to the device wafer during bonding. The bond and transfer cycle has a maximum temperature of 300°C and lasts about 2.5 h. This approach has been demonstrated with nickel (Ni) caps as thin as 5 microns, with thicker caps certainly possible, ranging in size from 200 μm to 1 mm. They were transferred with a lead-tin (Pb-Sn) solder layer and bonded with nickel-tin (Ni-Sn) TLP bonding with greater than 99% transfer yield across the wafer.",

keywords = "Diffusion soldering, Microelectromechanical systems (MEMS) packaging, Transferred thin-film packaging, Transient liquid phase bonding",

author = "Welch, {Warren C.} and Junseok Chae and Khalil Najafi",

note = "Funding Information: Manuscript received December 10, 2004; revised July 8, 2005. This work was supported by the Defense Advanced Research Profects Agency (DARPA) under Grants Micro/Nano-Mechanical Signal Processors for Miniaturized Low-Power RF Channel-Select Receivers (F30602-01-1-0573) and Environment-Resistant Micromachined Inertial Gyroscopes (ER-MIG) (W31P4Q-04-1-R001).",

year = "2005",

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doi = "10.1109/TADVP.2005.859356",

language = "English (US)",

volume = "28",

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journal = "IEEE Transactions on Advanced Packaging",

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AU - Chae, Junseok

AU - Najafi, Khalil

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PY - 2005/11

Y1 - 2005/11

N2 - This paper presents a modular, low profile, wafer-level encapsulation technology for microelectromechanical systems (MEMS) packaging. Electroplated caps are formed on top of a solder transfer layer previously deposited on a carrier wafer, then simultaneously transferred and bonded to a device wafer by a novel solder transfer method and transient liquid phase (TLP) bonding technology. The solder transfer method is enabled by the dewetting of the solder transfer layer from the carrier wafer and TLP bonding of the cap to the device wafer during bonding. The bond and transfer cycle has a maximum temperature of 300°C and lasts about 2.5 h. This approach has been demonstrated with nickel (Ni) caps as thin as 5 microns, with thicker caps certainly possible, ranging in size from 200 μm to 1 mm. They were transferred with a lead-tin (Pb-Sn) solder layer and bonded with nickel-tin (Ni-Sn) TLP bonding with greater than 99% transfer yield across the wafer.

AB - This paper presents a modular, low profile, wafer-level encapsulation technology for microelectromechanical systems (MEMS) packaging. Electroplated caps are formed on top of a solder transfer layer previously deposited on a carrier wafer, then simultaneously transferred and bonded to a device wafer by a novel solder transfer method and transient liquid phase (TLP) bonding technology. The solder transfer method is enabled by the dewetting of the solder transfer layer from the carrier wafer and TLP bonding of the cap to the device wafer during bonding. The bond and transfer cycle has a maximum temperature of 300°C and lasts about 2.5 h. This approach has been demonstrated with nickel (Ni) caps as thin as 5 microns, with thicker caps certainly possible, ranging in size from 200 μm to 1 mm. They were transferred with a lead-tin (Pb-Sn) solder layer and bonded with nickel-tin (Ni-Sn) TLP bonding with greater than 99% transfer yield across the wafer.

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KW - Transferred thin-film packaging

KW - Transient liquid phase bonding

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Transfer of metal MEMS packages using a wafer-level solder transfer technique

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Keywords

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