Trajectory transition due to gate depletion in corrugation gated quantum wires

Yuichi Ochiai, A. Wahju Widjaja, Nobuyuki Sasaki, Kazunuki Yamamoto, Kohji Ishibashi, Jonathan P. Bird, Yoshinobu Aoyagi, Takuo Sugano, David K. Ferry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied quantum interference effects observed in the low-temperature magnetoresistance of corrugation gated wires on a two-dimensional electron gas system. We have also studied the transport change due to deep gate depletion by means of the controlling gate voltage. We analyzed the gate voltage and magnetic field dependences of the negative magnetoresistance and observed small oscillations in the low-field magnetoresistances. The results show that a boundary-related or geometrical effect should strongly affect the phase-breaking mechanism in corrugation gated wires, and that the electron wave propagation differs between a narrow wire and a dot array, depending on the gate voltage.

Original languageEnglish (US)
Pages (from-to)1746-1748
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number3 SUPPL. B
StatePublished - Mar 1997

Fingerprint

Semiconductor quantum wires
Magnetoresistance
quantum wires
depletion
Trajectories
trajectories
Wire
Electric potential
wire
electric potential
Two dimensional electron gas
Wave propagation
Magnetic fields
electron gas
wave propagation
Electrons
interference
oscillations
magnetic fields
Temperature

Keywords

  • AB oscillations
  • Conductance fluctuations
  • Corrugation gated wires
  • GaAs/AlGaAs heterojunction
  • Split-gated quantum wires

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ochiai, Y., Widjaja, A. W., Sasaki, N., Yamamoto, K., Ishibashi, K., Bird, J. P., ... Ferry, D. K. (1997). Trajectory transition due to gate depletion in corrugation gated quantum wires. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(3 SUPPL. B), 1746-1748.

Trajectory transition due to gate depletion in corrugation gated quantum wires. / Ochiai, Yuichi; Widjaja, A. Wahju; Sasaki, Nobuyuki; Yamamoto, Kazunuki; Ishibashi, Kohji; Bird, Jonathan P.; Aoyagi, Yoshinobu; Sugano, Takuo; Ferry, David K.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 3 SUPPL. B, 03.1997, p. 1746-1748.

Research output: Contribution to journalArticle

Ochiai, Y, Widjaja, AW, Sasaki, N, Yamamoto, K, Ishibashi, K, Bird, JP, Aoyagi, Y, Sugano, T & Ferry, DK 1997, 'Trajectory transition due to gate depletion in corrugation gated quantum wires', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 36, no. 3 SUPPL. B, pp. 1746-1748.
Ochiai, Yuichi ; Widjaja, A. Wahju ; Sasaki, Nobuyuki ; Yamamoto, Kazunuki ; Ishibashi, Kohji ; Bird, Jonathan P. ; Aoyagi, Yoshinobu ; Sugano, Takuo ; Ferry, David K. / Trajectory transition due to gate depletion in corrugation gated quantum wires. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1997 ; Vol. 36, No. 3 SUPPL. B. pp. 1746-1748.
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AU - Widjaja, A. Wahju

AU - Sasaki, Nobuyuki

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AU - Ishibashi, Kohji

AU - Bird, Jonathan P.

AU - Aoyagi, Yoshinobu

AU - Sugano, Takuo

AU - Ferry, David K.

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AB - We studied quantum interference effects observed in the low-temperature magnetoresistance of corrugation gated wires on a two-dimensional electron gas system. We have also studied the transport change due to deep gate depletion by means of the controlling gate voltage. We analyzed the gate voltage and magnetic field dependences of the negative magnetoresistance and observed small oscillations in the low-field magnetoresistances. The results show that a boundary-related or geometrical effect should strongly affect the phase-breaking mechanism in corrugation gated wires, and that the electron wave propagation differs between a narrow wire and a dot array, depending on the gate voltage.

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