Towards the tailoring of P diffusion gettering to as-grown silicon material properties

Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Carlos Del Cañizo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

The evolution of Fe-related defects is simulated for different P diffusion gettering (PDG) processes which are applied during silicon solar cell processing. It is shown that the introduction of an extended PDG is beneficial for some as-grown Si materials but not essential for all of them. For mc-Si wafers with an as-grown Fe concentration ≤1014 cm-3, a good reduction of the Fei concentration and increase of the electron lifetime is achieved during standard PDG. For mc-Si wafers with a higher asgrown Fe concentration the introduction of defect engineering tools into the solar cell process seems to be advantageous. From comparison of standard PDG with extended PDG it is concluded that the latter leads to a stronger reduction of highly recombination active Fei atoms due to an enhanced segregation gettering effect. For an as-grown Fe concentration between 1014 cm-3 and 1015 cm-3, this enhanced Fei reduction results in an appreciable increase in the electron lifetime. However, for an as-grown Fe concentration >1015 cm-3, the PDG process needs to be optimized in order to reduce the total Fe concentration within the wafer as the electron lifetime after extended PDG keeps being limited by recombination at precipitated Fe.

Original languageEnglish (US)
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011
PublisherTrans Tech Publications Ltd
Pages158-165
Number of pages8
ISBN (Print)9783037852323
DOIs
StatePublished - Jan 1 2011
Externally publishedYes
Event14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 - Loipersdorf, Austria
Duration: Sep 25 2011Sep 30 2011

Publication series

NameSolid State Phenomena
Volume178-179
ISSN (Print)1012-0394

Other

Other14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011
CountryAustria
CityLoipersdorf
Period9/25/119/30/11

Keywords

  • Defect engineering
  • Extended gettering
  • Iron
  • Multi-crystalline silicon
  • Phosphorous diffusion

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Towards the tailoring of P diffusion gettering to as-grown silicon material properties'. Together they form a unique fingerprint.

  • Cite this

    Hofstetter, J., Lelièvre, J. F., Fenning, D. P., Bertoni, M. I., Buonassisi, T., & Del Cañizo, C. (2011). Towards the tailoring of P diffusion gettering to as-grown silicon material properties. In Gettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011 (pp. 158-165). (Solid State Phenomena; Vol. 178-179). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.178-179.158