Towards the tailoring of P diffusion gettering to as-grown silicon material properties

Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana Bertoni, Tonio Buonassisi, Carlos Del Cañizo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The evolution of Fe-related defects is simulated for different P diffusion gettering (PDG) processes which are applied during silicon solar cell processing. It is shown that the introduction of an extended PDG is beneficial for some as-grown Si materials but not essential for all of them. For mc-Si wafers with an as-grown Fe concentration ≤1014 cm-3, a good reduction of the Fei concentration and increase of the electron lifetime is achieved during standard PDG. For mc-Si wafers with a higher asgrown Fe concentration the introduction of defect engineering tools into the solar cell process seems to be advantageous. From comparison of standard PDG with extended PDG it is concluded that the latter leads to a stronger reduction of highly recombination active Fei atoms due to an enhanced segregation gettering effect. For an as-grown Fe concentration between 1014 cm-3 and 1015 cm-3, this enhanced Fei reduction results in an appreciable increase in the electron lifetime. However, for an as-grown Fe concentration >1015 cm-3, the PDG process needs to be optimized in order to reduce the total Fe concentration within the wafer as the electron lifetime after extended PDG keeps being limited by recombination at precipitated Fe.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages158-165
Number of pages8
Volume178-179
ISBN (Print)9783037852323
DOIs
StatePublished - 2011
Externally publishedYes
Event14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 - Loipersdorf, Austria
Duration: Sep 25 2011Sep 30 2011

Publication series

NameSolid State Phenomena
Volume178-179
ISSN (Print)10120394

Other

Other14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011
CountryAustria
CityLoipersdorf
Period9/25/119/30/11

Fingerprint

Silicon
Materials properties
silicon
wafers
life (durability)
Electrons
solar cells
Defects
electrons
Silicon solar cells
defects
Solar cells
engineering
Atoms
Processing
atoms

Keywords

  • Defect engineering
  • Extended gettering
  • Iron
  • Multi-crystalline silicon
  • Phosphorous diffusion

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Hofstetter, J., Lelièvre, J. F., Fenning, D. P., Bertoni, M., Buonassisi, T., & Del Cañizo, C. (2011). Towards the tailoring of P diffusion gettering to as-grown silicon material properties. In Solid State Phenomena (Vol. 178-179, pp. 158-165). (Solid State Phenomena; Vol. 178-179). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.178-179.158

Towards the tailoring of P diffusion gettering to as-grown silicon material properties. / Hofstetter, Jasmin; Lelièvre, Jean François; Fenning, David P.; Bertoni, Mariana; Buonassisi, Tonio; Del Cañizo, Carlos.

Solid State Phenomena. Vol. 178-179 Trans Tech Publications Ltd, 2011. p. 158-165 (Solid State Phenomena; Vol. 178-179).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hofstetter, J, Lelièvre, JF, Fenning, DP, Bertoni, M, Buonassisi, T & Del Cañizo, C 2011, Towards the tailoring of P diffusion gettering to as-grown silicon material properties. in Solid State Phenomena. vol. 178-179, Solid State Phenomena, vol. 178-179, Trans Tech Publications Ltd, pp. 158-165, 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011, Loipersdorf, Austria, 9/25/11. https://doi.org/10.4028/www.scientific.net/SSP.178-179.158
Hofstetter J, Lelièvre JF, Fenning DP, Bertoni M, Buonassisi T, Del Cañizo C. Towards the tailoring of P diffusion gettering to as-grown silicon material properties. In Solid State Phenomena. Vol. 178-179. Trans Tech Publications Ltd. 2011. p. 158-165. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.178-179.158
Hofstetter, Jasmin ; Lelièvre, Jean François ; Fenning, David P. ; Bertoni, Mariana ; Buonassisi, Tonio ; Del Cañizo, Carlos. / Towards the tailoring of P diffusion gettering to as-grown silicon material properties. Solid State Phenomena. Vol. 178-179 Trans Tech Publications Ltd, 2011. pp. 158-165 (Solid State Phenomena).
@inproceedings{08b71888981249ce98e99d5bd3d1991e,
title = "Towards the tailoring of P diffusion gettering to as-grown silicon material properties",
abstract = "The evolution of Fe-related defects is simulated for different P diffusion gettering (PDG) processes which are applied during silicon solar cell processing. It is shown that the introduction of an extended PDG is beneficial for some as-grown Si materials but not essential for all of them. For mc-Si wafers with an as-grown Fe concentration ≤1014 cm-3, a good reduction of the Fei concentration and increase of the electron lifetime is achieved during standard PDG. For mc-Si wafers with a higher asgrown Fe concentration the introduction of defect engineering tools into the solar cell process seems to be advantageous. From comparison of standard PDG with extended PDG it is concluded that the latter leads to a stronger reduction of highly recombination active Fei atoms due to an enhanced segregation gettering effect. For an as-grown Fe concentration between 1014 cm-3 and 1015 cm-3, this enhanced Fei reduction results in an appreciable increase in the electron lifetime. However, for an as-grown Fe concentration >1015 cm-3, the PDG process needs to be optimized in order to reduce the total Fe concentration within the wafer as the electron lifetime after extended PDG keeps being limited by recombination at precipitated Fe.",
keywords = "Defect engineering, Extended gettering, Iron, Multi-crystalline silicon, Phosphorous diffusion",
author = "Jasmin Hofstetter and Leli{\`e}vre, {Jean Fran{\cc}ois} and Fenning, {David P.} and Mariana Bertoni and Tonio Buonassisi and {Del Ca{\~n}izo}, Carlos",
year = "2011",
doi = "10.4028/www.scientific.net/SSP.178-179.158",
language = "English (US)",
isbn = "9783037852323",
volume = "178-179",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "158--165",
booktitle = "Solid State Phenomena",

}

TY - GEN

T1 - Towards the tailoring of P diffusion gettering to as-grown silicon material properties

AU - Hofstetter, Jasmin

AU - Lelièvre, Jean François

AU - Fenning, David P.

AU - Bertoni, Mariana

AU - Buonassisi, Tonio

AU - Del Cañizo, Carlos

PY - 2011

Y1 - 2011

N2 - The evolution of Fe-related defects is simulated for different P diffusion gettering (PDG) processes which are applied during silicon solar cell processing. It is shown that the introduction of an extended PDG is beneficial for some as-grown Si materials but not essential for all of them. For mc-Si wafers with an as-grown Fe concentration ≤1014 cm-3, a good reduction of the Fei concentration and increase of the electron lifetime is achieved during standard PDG. For mc-Si wafers with a higher asgrown Fe concentration the introduction of defect engineering tools into the solar cell process seems to be advantageous. From comparison of standard PDG with extended PDG it is concluded that the latter leads to a stronger reduction of highly recombination active Fei atoms due to an enhanced segregation gettering effect. For an as-grown Fe concentration between 1014 cm-3 and 1015 cm-3, this enhanced Fei reduction results in an appreciable increase in the electron lifetime. However, for an as-grown Fe concentration >1015 cm-3, the PDG process needs to be optimized in order to reduce the total Fe concentration within the wafer as the electron lifetime after extended PDG keeps being limited by recombination at precipitated Fe.

AB - The evolution of Fe-related defects is simulated for different P diffusion gettering (PDG) processes which are applied during silicon solar cell processing. It is shown that the introduction of an extended PDG is beneficial for some as-grown Si materials but not essential for all of them. For mc-Si wafers with an as-grown Fe concentration ≤1014 cm-3, a good reduction of the Fei concentration and increase of the electron lifetime is achieved during standard PDG. For mc-Si wafers with a higher asgrown Fe concentration the introduction of defect engineering tools into the solar cell process seems to be advantageous. From comparison of standard PDG with extended PDG it is concluded that the latter leads to a stronger reduction of highly recombination active Fei atoms due to an enhanced segregation gettering effect. For an as-grown Fe concentration between 1014 cm-3 and 1015 cm-3, this enhanced Fei reduction results in an appreciable increase in the electron lifetime. However, for an as-grown Fe concentration >1015 cm-3, the PDG process needs to be optimized in order to reduce the total Fe concentration within the wafer as the electron lifetime after extended PDG keeps being limited by recombination at precipitated Fe.

KW - Defect engineering

KW - Extended gettering

KW - Iron

KW - Multi-crystalline silicon

KW - Phosphorous diffusion

UR - http://www.scopus.com/inward/record.url?scp=80053275995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053275995&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.178-179.158

DO - 10.4028/www.scientific.net/SSP.178-179.158

M3 - Conference contribution

AN - SCOPUS:80053275995

SN - 9783037852323

VL - 178-179

T3 - Solid State Phenomena

SP - 158

EP - 165

BT - Solid State Phenomena

PB - Trans Tech Publications Ltd

ER -