Abstract

We utilize a 3D full-band Cellular Monte Car- lo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

Original languageEnglish (US)
Pages (from-to)187-191
Number of pages5
JournalJournal of Computational Electronics
Volume7
Issue number3
DOIs
StatePublished - 2008

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InGaAs
High electron mobility transistors
high electron mobility transistors
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Railroad cars
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Keywords

  • Millimeter-wave transistors
  • Monte Carlo methods
  • Pseudomorphic high-electron mobility transistors (p-HEMTs)

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Towards the global modeling of InGaAs-based pseudomorphic HEMTs. / Ayubi-Moak, Jay S.; Akis, R.; Ferry, D. K.; Goodnick, Stephen; Faralli, N.; Saraniti, Marco.

In: Journal of Computational Electronics, Vol. 7, No. 3, 2008, p. 187-191.

Research output: Contribution to journalArticle

Ayubi-Moak, Jay S. ; Akis, R. ; Ferry, D. K. ; Goodnick, Stephen ; Faralli, N. ; Saraniti, Marco. / Towards the global modeling of InGaAs-based pseudomorphic HEMTs. In: Journal of Computational Electronics. 2008 ; Vol. 7, No. 3. pp. 187-191.
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