Towards graphene ghz/thz nanosensor

Akram M. Mahjoub; Shoutaro Motooka; Nobuyuki Aoki; Jungwoo Song; Jonathan P. Bird; Yukio Kawano; David K. Ferry; Koji Ishibashi; Yuichi Ochiai

doi:10.1143/JJAP.50.070119

Towards graphene ghz/thz nanosensor

Akram M. Mahjoub, Shoutaro Motooka, Nobuyuki Aoki, Jungwoo Song, Jonathan P. Bird, Yukio Kawano, David K. Ferry, Koji Ishibashi, Yuichi Ochiai

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A quantum dot (QD) sensing device, fabricated from nanoscaled carbon material has been studied using of a bilayer graphene field effect transistor in order to enable its application to the detection of microwave (GHz) and/or terahertz (THz) radiation. Recently, it has been found that there exist several common features in low temperature quantum transport, found in experimental results of conductance quantization in a semiconductor QDs and the magnetoresistance of a graphene QDs. The applicability of a graphene field effect transistor at the GHz/THz range is discussed in terms of the microwave transconductance characteristics up to 40 GHz.

Original language	English (US)
Article number	070119
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.070119
State	Published - Jul 2011

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "A quantum dot (QD) sensing device, fabricated from nanoscaled carbon material has been studied using of a bilayer graphene field effect transistor in order to enable its application to the detection of microwave (GHz) and/or terahertz (THz) radiation. Recently, it has been found that there exist several common features in low temperature quantum transport, found in experimental results of conductance quantization in a semiconductor QDs and the magnetoresistance of a graphene QDs. The applicability of a graphene field effect transistor at the GHz/THz range is discussed in terms of the microwave transconductance characteristics up to 40 GHz.",

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AU - Mahjoub, Akram M.

AU - Motooka, Shoutaro

AU - Aoki, Nobuyuki

AU - Song, Jungwoo

AU - Bird, Jonathan P.

AU - Kawano, Yukio

AU - Ferry, David K.

AU - Ishibashi, Koji

AU - Ochiai, Yuichi

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AB - A quantum dot (QD) sensing device, fabricated from nanoscaled carbon material has been studied using of a bilayer graphene field effect transistor in order to enable its application to the detection of microwave (GHz) and/or terahertz (THz) radiation. Recently, it has been found that there exist several common features in low temperature quantum transport, found in experimental results of conductance quantization in a semiconductor QDs and the magnetoresistance of a graphene QDs. The applicability of a graphene field effect transistor at the GHz/THz range is discussed in terms of the microwave transconductance characteristics up to 40 GHz.

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Towards graphene ghz/thz nanosensor

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