Abstract
Experiments are described in which the positive and negative relative ionization probabilities are measured for fourteen elements and two compound semiconductors, sputtered with either oxygen or cesium primary ions. By measuring the relative ionization probabilities of three dopant elements, ion-implanted simultaneously in all samples to the same common dose, a matrix-effect factor was determined for each sample. It is shown that, when the substrate ion yields are corrected for their respective self-matrix effects, the positive ion yields, and, to some extent the negative ion yields, scale exponentially with ionization potential or electron affinity. The extent to which such exponential ion yield behavior is a universal feature of sputtered ion emission is examined, and it is shown that, not only must a universal model of sputtered ion emission rationalize such behavior, but also the detailed nature of the exponential ion yield data closely constrains the nature of such a model. In particular, it is shown that the ion yield data contains no evidence for nearest neighbor effects or band structure effects in sputtered ion emission.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 373-377 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods |
| Volume | 168 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 1980 |
| Externally published | Yes |
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Towards a universal model for sputtered ion emission. / Williams, Peter; Katz, William; Evans, C. A.
In: Nuclear Instruments and Methods, Vol. 168, No. 1-3, 1980, p. 373-377.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Towards a universal model for sputtered ion emission
AU - Williams, Peter
AU - Katz, William
AU - Evans, C. A.
PY - 1980
Y1 - 1980
N2 - Experiments are described in which the positive and negative relative ionization probabilities are measured for fourteen elements and two compound semiconductors, sputtered with either oxygen or cesium primary ions. By measuring the relative ionization probabilities of three dopant elements, ion-implanted simultaneously in all samples to the same common dose, a matrix-effect factor was determined for each sample. It is shown that, when the substrate ion yields are corrected for their respective self-matrix effects, the positive ion yields, and, to some extent the negative ion yields, scale exponentially with ionization potential or electron affinity. The extent to which such exponential ion yield behavior is a universal feature of sputtered ion emission is examined, and it is shown that, not only must a universal model of sputtered ion emission rationalize such behavior, but also the detailed nature of the exponential ion yield data closely constrains the nature of such a model. In particular, it is shown that the ion yield data contains no evidence for nearest neighbor effects or band structure effects in sputtered ion emission.
AB - Experiments are described in which the positive and negative relative ionization probabilities are measured for fourteen elements and two compound semiconductors, sputtered with either oxygen or cesium primary ions. By measuring the relative ionization probabilities of three dopant elements, ion-implanted simultaneously in all samples to the same common dose, a matrix-effect factor was determined for each sample. It is shown that, when the substrate ion yields are corrected for their respective self-matrix effects, the positive ion yields, and, to some extent the negative ion yields, scale exponentially with ionization potential or electron affinity. The extent to which such exponential ion yield behavior is a universal feature of sputtered ion emission is examined, and it is shown that, not only must a universal model of sputtered ion emission rationalize such behavior, but also the detailed nature of the exponential ion yield data closely constrains the nature of such a model. In particular, it is shown that the ion yield data contains no evidence for nearest neighbor effects or band structure effects in sputtered ion emission.
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U2 - 10.1016/0029-554X(80)91278-1
DO - 10.1016/0029-554X(80)91278-1
M3 - Article
VL - 168
SP - 373
EP - 377
JO - Nuclear Instruments and Methods
JF - Nuclear Instruments and Methods
SN - 0029-554X
IS - 1-3
ER -