Abstract
Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.
| Original language | English (US) |
|---|---|
| Article number | 061504 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 35 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 1 2017 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Toward plasma enhanced atomic layer deposition of oxides on graphene : Understanding plasma effects. / Trimble, Christie J.; Van Engelhoven, Trevor; Zaniewski, Anna M.; Benipal, Manpuneet K.; Nemanich, Robert.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 35, No. 6, 061504, 01.11.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Toward plasma enhanced atomic layer deposition of oxides on graphene
T2 - Understanding plasma effects
AU - Trimble, Christie J.
AU - Van Engelhoven, Trevor
AU - Zaniewski, Anna M.
AU - Benipal, Manpuneet K.
AU - Nemanich, Robert
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.
AB - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.
UR - http://www.scopus.com/inward/record.url?scp=85027468925&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027468925&partnerID=8YFLogxK
U2 - 10.1116/1.4997421
DO - 10.1116/1.4997421
M3 - Article
VL - 35
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 6
M1 - 061504
ER -