Toward plasma enhanced atomic layer deposition of oxides on graphene

Understanding plasma effects

Christie J. Trimble, Trevor Van Engelhoven, Anna M. Zaniewski, Manpuneet K. Benipal, Robert Nemanich

Research output: Contribution to journalArticle

Abstract

Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.

Original languageEnglish (US)
Article number061504
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number6
DOIs
StatePublished - Nov 1 2017

Fingerprint

Graphite
Atomic layer deposition
atomic layer epitaxy
Oxides
Graphene
graphene
Plasmas
oxides
deterioration
Deterioration
Spectroscopic analysis
Dielectric films
Aluminum Oxide
Ultrathin films
spectroscopic analysis
Oxide films
oxide films
emerging
Atomic force microscopy
Deposits

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Toward plasma enhanced atomic layer deposition of oxides on graphene : Understanding plasma effects. / Trimble, Christie J.; Van Engelhoven, Trevor; Zaniewski, Anna M.; Benipal, Manpuneet K.; Nemanich, Robert.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 35, No. 6, 061504, 01.11.2017.

Research output: Contribution to journalArticle

@article{70968ac5efdc41bba9d88e846f14fd8a,
title = "Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects",
abstract = "Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.",
author = "Trimble, {Christie J.} and {Van Engelhoven}, Trevor and Zaniewski, {Anna M.} and Benipal, {Manpuneet K.} and Robert Nemanich",
year = "2017",
month = "11",
day = "1",
doi = "10.1116/1.4997421",
language = "English (US)",
volume = "35",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Toward plasma enhanced atomic layer deposition of oxides on graphene

T2 - Understanding plasma effects

AU - Trimble, Christie J.

AU - Van Engelhoven, Trevor

AU - Zaniewski, Anna M.

AU - Benipal, Manpuneet K.

AU - Nemanich, Robert

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.

AB - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.

UR - http://www.scopus.com/inward/record.url?scp=85027468925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027468925&partnerID=8YFLogxK

U2 - 10.1116/1.4997421

DO - 10.1116/1.4997421

M3 - Article

VL - 35

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

M1 - 061504

ER -