Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects

Christie J. Trimble, Trevor Van Engelhoven, Anna M. Zaniewski, Manpuneet K. Benipal, Robert Nemanich

Research output: Contribution to journalArticlepeer-review

Abstract

Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.

Original languageEnglish (US)
Article number061504
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number6
DOIs
StatePublished - Nov 1 2017

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects'. Together they form a unique fingerprint.

Cite this