TY - JOUR
T1 - Toward plasma enhanced atomic layer deposition of oxides on graphene
T2 - Understanding plasma effects
AU - Trimble, Christie J.
AU - Van Engelhoven, Trevor
AU - Zaniewski, Anna M.
AU - Benipal, Manpuneet K.
AU - Nemanich, Robert
N1 - Funding Information:
This work was supported by the National Science Foundation under Grant No. DMR-1206935. The authors gratefully acknowledge the use of facilities in the LeRoy Eyring Center for Solid State Science at Arizona State University. C.T. acknowledges support of the Arizona NASA Space Grant Internship program.
Publisher Copyright:
© 2017 American Vacuum Society.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.
AB - Integration of dielectrics with graphene is essential for the fulfillment of graphene based electronic applications. While many dielectric deposition techniques exist, plasma enhanced atomic layer deposition (PEALD) is emerging as a technique to deposit ultrathin dielectric films with superior densities and interfaces. However, the degree to which PEALD on graphene can be achieved without plasma-induced graphene deterioration is not well understood. In this work, the authors investigate a range of plasma conditions across a single sample, characterizing both oxide growth and graphene deterioration using spectroscopic analysis and atomic force microscopy. Investigation of graphene and film quality produced under these conditions provides insight into plasma effects. Using their method, the authors achieve ultrathin (<1 nm) aluminum oxide films atop graphene.
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U2 - 10.1116/1.4997421
DO - 10.1116/1.4997421
M3 - Article
AN - SCOPUS:85027468925
VL - 35
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 6
M1 - 061504
ER -