Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, I. Agha, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Waveguides were fabricated from n-type doped GeSn layers with Sn content in the range 4.4-7.0 % Sn grown on Ge-buffered Si substrates. The waveguides were optically pumped a 976nm continuous wave laser, and their power output was measured as a function of pump power. The output power dependence indicates light amplification through stimulated emission, and that GeSn acts as a gain medium. Under the experimental conditions, the cavity gain did not exceed the lasing threshold, but amplified spontaneous emission was still observed. This demonstration of optical gain at room temperature is an important first step to achieving room temperature lasing in GeSn.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Materials: Materials, Processing, and Devices 7
PublisherElectrochemical Society Inc.
Pages163-176
Number of pages14
Volume75
Edition8
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
EventSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J., & Kouvetakis, J. (2016). Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., Vol. 75, pp. 163-176). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0163ecst