Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope

R. Arinero, W. Hourani, A. D. Touboul, B. Gautier, M. Ramonda, D. Albertini, L. Militaru, Yago Gonzalez Velo, C. Guasch, F. Saigné

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.

Original languageEnglish (US)
Article number014304
JournalJournal of Applied Physics
Volume110
Issue number1
DOIs
StatePublished - Jul 1 2011
Externally publishedYes

Fingerprint

oxide films
microscopes
degradation
oxides
thin films
ramps
acquisition
atomic force microscopy
vacuum
oxidation
electric potential
water
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films : Investigation of the best experimental conditions with a conductive-atomic force microscope. / Arinero, R.; Hourani, W.; Touboul, A. D.; Gautier, B.; Ramonda, M.; Albertini, D.; Militaru, L.; Gonzalez Velo, Yago; Guasch, C.; Saigné, F.

In: Journal of Applied Physics, Vol. 110, No. 1, 014304, 01.07.2011.

Research output: Contribution to journalArticle

Arinero, R, Hourani, W, Touboul, AD, Gautier, B, Ramonda, M, Albertini, D, Militaru, L, Gonzalez Velo, Y, Guasch, C & Saigné, F 2011, 'Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope', Journal of Applied Physics, vol. 110, no. 1, 014304. https://doi.org/10.1063/1.3603037
Arinero, R. ; Hourani, W. ; Touboul, A. D. ; Gautier, B. ; Ramonda, M. ; Albertini, D. ; Militaru, L. ; Gonzalez Velo, Yago ; Guasch, C. ; Saigné, F. / Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films : Investigation of the best experimental conditions with a conductive-atomic force microscope. In: Journal of Applied Physics. 2011 ; Vol. 110, No. 1.
@article{285d9e892d384ea4956d79b3f93f9261,
title = "Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope",
abstract = "We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.",
author = "R. Arinero and W. Hourani and Touboul, {A. D.} and B. Gautier and M. Ramonda and D. Albertini and L. Militaru and {Gonzalez Velo}, Yago and C. Guasch and F. Saign{\'e}",
year = "2011",
month = "7",
day = "1",
doi = "10.1063/1.3603037",
language = "English (US)",
volume = "110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films

T2 - Investigation of the best experimental conditions with a conductive-atomic force microscope

AU - Arinero, R.

AU - Hourani, W.

AU - Touboul, A. D.

AU - Gautier, B.

AU - Ramonda, M.

AU - Albertini, D.

AU - Militaru, L.

AU - Gonzalez Velo, Yago

AU - Guasch, C.

AU - Saigné, F.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.

AB - We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.

UR - http://www.scopus.com/inward/record.url?scp=79960481578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960481578&partnerID=8YFLogxK

U2 - 10.1063/1.3603037

DO - 10.1063/1.3603037

M3 - Article

AN - SCOPUS:79960481578

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014304

ER -