TY - JOUR
T1 - Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02Si films
T2 - Investigation of the best experimental conditions with a conductive-atomic force microscope
AU - Arinero, R.
AU - Hourani, W.
AU - Touboul, A. D.
AU - Gautier, B.
AU - Ramonda, M.
AU - Albertini, D.
AU - Militaru, L.
AU - Gonzalez-Velo, Y.
AU - Guasch, C.
AU - Saigné, F.
N1 - Funding Information:
This work is supported by a “program blanc” French ANR grant (PiGS project 2011–2015). The financial support of the “Réseau National des Grandes Centrales de Technologies” (RTB–Projet Exogène) is acknowledged. The authors are also grateful to Yveline Gobil and Amal Chabli from the CEA Leti-Minatec technology platform (Grenoble, France) for SiO 2 /Si sample preparation.
PY - 2011/7/1
Y1 - 2011/7/1
N2 - We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.
AB - We report, in this paper, investigations on the experimental conditions to be adopted to improve the reproducibility and the stability of conductive-atomic force microscopy experiments performed on ultra-thin oxide films. In particular, we demonstrate the key role of the water film layer which can disturb the acquisition of ramp voltage stresses and, in fine, lead to an important tip oxidation. Starting from these results, Weibull statistical analyses of stress-induced electrical degradation were carried out under vacuum on SiO2Si films. We studied the influence of different parameters like the oxide thickness, the substrate doping type and doping level. We also observed important morphological effects, more or less visible, according to the type of tip and the oxide thickness. Those effects can be attributed, on one hand, to different temperature rise at the tipoxide interface and, on the other hand, to different energy dissipated through the oxide film.
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U2 - 10.1063/1.3603037
DO - 10.1063/1.3603037
M3 - Article
AN - SCOPUS:79960481578
VL - 110
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 014304
ER -