Abstract
Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781467350570 |
| DOIs | |
| State | Published - Oct 28 2013 |
| Event | 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 - Oxford, United Kingdom Duration: Sep 23 2013 → Sep 27 2013 |
Other
| Other | 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 |
|---|---|
| Country | United Kingdom |
| City | Oxford |
| Period | 9/23/13 → 9/27/13 |
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Keywords
- chalcogenide glass
- programmable metallization cells
- radiation hardening
- ReRAM
- total ionizing dose
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
Cite this
Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. / Dandamudi, P.; Barnaby, Hugh; Kozicki, Michael; Gonzalez Velo, Yago; Holbert, Keith.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc., 2013. 6937426.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells
AU - Dandamudi, P.
AU - Barnaby, Hugh
AU - Kozicki, Michael
AU - Gonzalez Velo, Yago
AU - Holbert, Keith
PY - 2013/10/28
Y1 - 2013/10/28
N2 - Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.
AB - Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.
KW - chalcogenide glass
KW - programmable metallization cells
KW - radiation hardening
KW - ReRAM
KW - total ionizing dose
UR - http://www.scopus.com/inward/record.url?scp=84949924332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949924332&partnerID=8YFLogxK
U2 - 10.1109/RADECS.2013.6937426
DO - 10.1109/RADECS.2013.6937426
M3 - Conference contribution
AN - SCOPUS:84949924332
SN - 9781467350570
BT - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
PB - Institute of Electrical and Electronics Engineers Inc.
ER -