Abstract

Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60) using 60Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.

Original languageEnglish (US)
Title of host publicationProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781467350570
DOIs
StatePublished - Oct 28 2013
Event2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 - Oxford, United Kingdom
Duration: Sep 23 2013Sep 27 2013

Other

Other2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013
CountryUnited Kingdom
CityOxford
Period9/23/139/27/13

Fingerprint

Metallizing
dosage
cells
oxidation-reduction reactions
Data storage equipment
Flash memory
Redox reactions
random access memory
radiation tolerance
Gamma rays
flash
emerging
Electrolytes
electrolytes
gamma rays
degradation
solid state
Radiation
conduction
Degradation

Keywords

  • chalcogenide glass
  • programmable metallization cells
  • radiation hardening
  • ReRAM
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Dandamudi, P., Barnaby, H., Kozicki, M., Gonzalez Velo, Y., & Holbert, K. (2013). Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS [6937426] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2013.6937426, https://doi.org/10.1109/RADECS.2013.6937426

Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. / Dandamudi, P.; Barnaby, Hugh; Kozicki, Michael; Gonzalez Velo, Yago; Holbert, Keith.

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc., 2013. 6937426.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dandamudi, P, Barnaby, H, Kozicki, M, Gonzalez Velo, Y & Holbert, K 2013, Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. in Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS., 6937426, Institute of Electrical and Electronics Engineers Inc., 2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013, Oxford, United Kingdom, 9/23/13. https://doi.org/10.1109/RADECS.2013.6937426, https://doi.org/10.1109/RADECS.2013.6937426
Dandamudi P, Barnaby H, Kozicki M, Gonzalez Velo Y, Holbert K. Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc. 2013. 6937426 https://doi.org/10.1109/RADECS.2013.6937426, https://doi.org/10.1109/RADECS.2013.6937426
Dandamudi, P. ; Barnaby, Hugh ; Kozicki, Michael ; Gonzalez Velo, Yago ; Holbert, Keith. / Total ionizing dose tolerance of the resistance switching of Ag-Ge40S60 based programmable metallization cells. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS. Institute of Electrical and Electronics Engineers Inc., 2013.
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