Abstract

Programmable Metallization Cells (PMC) are two- terminal elements that exhibit resistance switching based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory. In this study we demonstrate the radiation tolerance of Ag-doped Ge 40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60 ) using 60Co gamma rays. The irradiation tests on the PMC devices, with two different Ag anode thicknesses (35 nm and 100 nm), show no significant degradation in the resistance switching characteristics.

Original languageEnglish (US)
Article number6762812
Pages (from-to)1726-1731
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number4
DOIs
StatePublished - 2014

Fingerprint

Metallizing
dosage
cells
oxidation-reduction reactions
Data storage equipment
Flash memory
Redox reactions
random access memory
radiation tolerance
Gamma rays
flash
emerging
Anodes
anodes
Electrolytes
Irradiation
electrolytes
gamma rays
degradation
solid state

Keywords

  • CBRAM
  • chalcogenide glass
  • non-volatile memory
  • programmable metallization cells
  • radiation hard
  • ReRAM
  • RRAM
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Total ionizing dose tolerance of Ag - Ge40S60 based programmable metallization cells. / Dandamudi, P.; Kozicki, Michael; Barnaby, Hugh; Gonzalez Velo, Yago; Holbert, Keith.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 4, 6762812, 2014, p. 1726-1731.

Research output: Contribution to journalArticle

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AU - Dandamudi, P.

AU - Kozicki, Michael

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AU - Gonzalez Velo, Yago

AU - Holbert, Keith

PY - 2014

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AB - Programmable Metallization Cells (PMC) are two- terminal elements that exhibit resistance switching based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory. In this study we demonstrate the radiation tolerance of Ag-doped Ge 40S60 based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge40S60 ) using 60Co gamma rays. The irradiation tests on the PMC devices, with two different Ag anode thicknesses (35 nm and 100 nm), show no significant degradation in the resistance switching characteristics.

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