Abstract

Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.

Original languageEnglish (US)
Article number6704284
Pages (from-to)205-207
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
StatePublished - Feb 2014

Fingerprint

Data storage equipment
Ionizing radiation
Redox reactions
Electrolytes
Cations
Positive ions
Degradation
Electrodes
Networks (circuits)

Keywords

  • CBRAM
  • errors
  • medical
  • nonvolatile memory
  • reliability
  • retention
  • space
  • supply current
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Total ionizing dose retention capability of conductive bridging random access memory. / Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Gopalan, Chakravarthy; Holbert, Keith.

In: IEEE Electron Device Letters, Vol. 35, No. 2, 6704284, 02.2014, p. 205-207.

Research output: Contribution to journalArticle

@article{967a5b0f8b0f4ff6a3302988c2ddf733,
title = "Total ionizing dose retention capability of conductive bridging random access memory",
abstract = "Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.",
keywords = "CBRAM, errors, medical, nonvolatile memory, reliability, retention, space, supply current, total ionizing dose",
author = "{Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and Chakravarthy Gopalan and Keith Holbert",
year = "2014",
month = "2",
doi = "10.1109/LED.2013.2295801",
language = "English (US)",
volume = "35",
pages = "205--207",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Total ionizing dose retention capability of conductive bridging random access memory

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Gopalan, Chakravarthy

AU - Holbert, Keith

PY - 2014/2

Y1 - 2014/2

N2 - Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.

AB - Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.

KW - CBRAM

KW - errors

KW - medical

KW - nonvolatile memory

KW - reliability

KW - retention

KW - space

KW - supply current

KW - total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=84893862452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893862452&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2295801

DO - 10.1109/LED.2013.2295801

M3 - Article

AN - SCOPUS:84893862452

VL - 35

SP - 205

EP - 207

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 6704284

ER -