Abstract

Resistance switching memory devices based on cation transport through an electrolyte and redox reactions at the electrodes have been implemented in a commercial memory technology known as conductive bridging random access memory (CBRAM). In this letter, the number of bit errors and variations in the supply current of CBRAM circuits exposed to ionizing radiation is investigated and compared with common memory technologies. The results indicate that even after exposure to high levels of ionizing radiation, CBRAM devices show no degradation in memory retention, which suggests that the technology has high reliability capability when compared with existing nonvolatile memory solutions.

Original languageEnglish (US)
Article number6704284
Pages (from-to)205-207
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
StatePublished - Feb 1 2014

Keywords

  • CBRAM
  • errors
  • medical
  • nonvolatile memory
  • reliability
  • retention
  • space
  • supply current
  • total ionizing dose

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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