@inproceedings{d937b1f4a2ba4eb491d57a51038ac7ad,
title = "Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology",
abstract = "Experimental results showing the response of 22nm fully depleted silicon-on-insulator (FD-SOI) devices are presented. Gate voltage shift at a constant drain current is extracted and compared across all similar devices of varying width.",
keywords = "22nm, FD-SOI, TID, drain current, gate voltage shift, radiation effects",
author = "Jose Solano and Matthew Spear and Trace Wallace and Donald Wilson and Oliver Forman and Esqueda, {Ivan Sanchez} and Hugh Barnaby and Aymeric Privat and Marek Turowski and Rudolf Vonniederhausern",
note = "Funding Information: This report was originally submitted on February 4th, 2022. This work was supported by the Navy Strategic & Spectrum Missions Advanced Resilient Trusted Systems (S2MARTS) program, Project No. S2MARTS 19-03 and the Jet Propulsion Laboratory (Subcontract 1651948 and Subcontract No. 1671929). The authors would like to thank William Kemp and Richard Netzer of AFRL, Matthew Gadlage of Navy Crane, Jean Yang-Scharlotta of JPL, and Jake Tausch of JD Instruments for their support of this work. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Radiation Effects Data Workshop, REDW 2022 ; Conference date: 18-07-2022 Through 22-07-2022",
year = "2022",
doi = "10.1109/REDW56037.2022.9921673",
language = "English (US)",
series = "IEEE Radiation Effects Data Workshop",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE Radiation Effects Data Workshop, REDW 2022 - in conjunction with 2022 NSREC, Proceedings",
}