Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Lawrence T Clark; William E. Brown; Keith E. Holbert; A. Rao; P. Bikkina; Marek Turowski; Andrew Levy; T. Olvarez; Jim D. Butler; Clifford S. Youngsciortino; Steven M. Guertin

doi:10.1109/TNS.2023.3244106

Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Lawrence T Clark, William E. Brown, Keith E. Holbert, A. Rao, P. Bikkina, Marek Turowski, Andrew Levy, T. Olvarez, Jim D. Butler, Clifford S. Youngsciortino, Steven M. Guertin

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The results of total ionizing dose (TID) experiments on fully depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO)-level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low-voltage SRAM results.

Original language	English (US)
Pages (from-to)	2034-2041
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	70
Issue number	8
DOIs	https://doi.org/10.1109/TNS.2023.3244106
State	Published - Aug 1 2023
Externally published	Yes

Keywords

Fully depleted silicon-on-insulator (FDSOI)
static random access memory (SRAM)
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Electrical and Electronic Engineering
Nuclear Energy and Engineering

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10.1109/TNS.2023.3244106

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Clark, L. T., Brown, W. E., Holbert, K. E., Rao, A., Bikkina, P., Turowski, M., Levy, A., Olvarez, T., Butler, J. D., Youngsciortino, C. S., & Guertin, S. M. (2023). Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory. IEEE Transactions on Nuclear Science, 70(8), 2034-2041. https://doi.org/10.1109/TNS.2023.3244106

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title = "Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory",

abstract = "The results of total ionizing dose (TID) experiments on fully depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO)-level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low-voltage SRAM results.",

keywords = "Fully depleted silicon-on-insulator (FDSOI), static random access memory (SRAM), total ionizing dose (TID)",

author = "Clark, {Lawrence T} and Brown, {William E.} and Holbert, {Keith E.} and A. Rao and P. Bikkina and Marek Turowski and Andrew Levy and T. Olvarez and Butler, {Jim D.} and Youngsciortino, {Clifford S.} and Guertin, {Steven M.}",

note = "Funding Information: This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, through the National Aeronautics and Space Administration (NASA) under Grant 80NM0018D0004; and in part by the NASA Space Technology Mission Directorate (STMD). Publisher Copyright: {\textcopyright} 2023 IEEE.",

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doi = "10.1109/TNS.2023.3244106",

language = "English (US)",

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AU - Clark, Lawrence T

AU - Brown, William E.

AU - Holbert, Keith E.

AU - Rao, A.

AU - Bikkina, P.

AU - Turowski, Marek

AU - Levy, Andrew

AU - Olvarez, T.

AU - Butler, Jim D.

AU - Youngsciortino, Clifford S.

AU - Guertin, Steven M.

N1 - Funding Information: This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, through the National Aeronautics and Space Administration (NASA) under Grant 80NM0018D0004; and in part by the NASA Space Technology Mission Directorate (STMD). Publisher Copyright: © 2023 IEEE.

PY - 2023/8/1

Y1 - 2023/8/1

N2 - The results of total ionizing dose (TID) experiments on fully depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO)-level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low-voltage SRAM results.

AB - The results of total ionizing dose (TID) experiments on fully depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO)-level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low-voltage SRAM results.

KW - Fully depleted silicon-on-insulator (FDSOI)

KW - static random access memory (SRAM)

KW - total ionizing dose (TID)

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Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

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