Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

Lawrence T. Clark; William E. Brown; Keith E. Holbert; A. Rao; P. Bikkina; Marek Turowski; Andrew Levy; T. Olvarez; Jim D. Butler; Clifford YoungSciortino; Steven M. Guertin

doi:10.1109/TNS.2023.3244106

Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

Lawrence T. Clark, William E. Brown, Keith E. Holbert, A. Rao, P. Bikkina, Marek Turowski, Andrew Levy, T. Olvarez, Jim D. Butler, Clifford YoungSciortino, Steven M. Guertin

Research output: Contribution to journal › Article › peer-review

Abstract

The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using ⁶⁰Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.

Original language	English (US)
Pages (from-to)	1
Number of pages	1
Journal	IEEE Transactions on Nuclear Science
DOIs	https://doi.org/10.1109/TNS.2023.3244106
State	Accepted/In press - 2023
Externally published	Yes

Keywords

Circuit stability
FDSOI
Integrated circuits
MOS devices
Radiation effects
Silicon-on-insulator
SRAM
SRAM cells
TID
Transistors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2023.3244106

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Clark, L. T., Brown, W. E., Holbert, K. E., Rao, A., Bikkina, P., Turowski, M., Levy, A., Olvarez, T., Butler, J. D., YoungSciortino, C., & Guertin, S. M. (Accepted/In press). Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory. IEEE Transactions on Nuclear Science, 1. https://doi.org/10.1109/TNS.2023.3244106

@article{2b03649ab15c43d3872aa5834c73cdd8,

title = "Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory",

abstract = "The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.",

keywords = "Circuit stability, FDSOI, Integrated circuits, MOS devices, Radiation effects, Silicon-on-insulator, SRAM, SRAM cells, TID, Transistors",

author = "Clark, {Lawrence T.} and Brown, {William E.} and Holbert, {Keith E.} and A. Rao and P. Bikkina and Marek Turowski and Andrew Levy and T. Olvarez and Butler, {Jim D.} and Clifford YoungSciortino and Guertin, {Steven M.}",

note = "Publisher Copyright: IEEE",

year = "2023",

doi = "10.1109/TNS.2023.3244106",

language = "English (US)",

pages = "1",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

AU - Clark, Lawrence T.

AU - Brown, William E.

AU - Holbert, Keith E.

AU - Rao, A.

AU - Bikkina, P.

AU - Turowski, Marek

AU - Levy, Andrew

AU - Olvarez, T.

AU - Butler, Jim D.

AU - YoungSciortino, Clifford

AU - Guertin, Steven M.

N1 - Publisher Copyright: IEEE

PY - 2023

Y1 - 2023

N2 - The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.

AB - The results of total ionizing dose (TID) experiments on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) are presented. Using 60Co gamma irradiation, tests were conducted at multiple voltages and with and without read and write assists. The results demonstrate cell stability past 200 krad(Si) TID in standard operational modes. The impact of read and write assists and read timing via margin mode tests are examined. We also report input-output (IO) level translation circuit failures, as well as anomalous circuit failures attributable to IO at relatively low TID dose. Finally, we show post-TID anneal and low voltage SRAM results.

KW - Circuit stability

KW - FDSOI

KW - Integrated circuits

KW - MOS devices

KW - Radiation effects

KW - Silicon-on-insulator

KW - SRAM

KW - SRAM cells

KW - TID

KW - Transistors

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U2 - 10.1109/TNS.2023.3244106

DO - 10.1109/TNS.2023.3244106

M3 - Article

AN - SCOPUS:85149417798

SN - 0018-9499

SP - 1

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

ER -

Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

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Keywords

ASJC Scopus subject areas

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