Total Ionizing Dose Impact on 22-nm FD-SOI Ring Oscillator Current and Frequency

Lawrence T. Clark, William E. Brown, Clifford S. Young-Sciortino, Jim D. Butler, Steven M. Guertin, Keith E. Holbert, Phaneendra Bikkina, Sumukh Bhanushali, Marek Turowski, Andrew Levy

Research output: Contribution to journalArticlepeer-review

Abstract

Total ionizing dose (TID) has a significant effect on silicon-on-insulator (SOI) circuits, manifesting primarily as a front-gate threshold voltage (Vt ) shift. This article presents data on ring oscillator (RO) responses of 22-nm fully depleted (FD-SOI) thin oxide (core logic) devices to gamma-ray doses above 1 Mrad(Si). We show large current and frequency TID response differences between ROs comprised of different logic gates. Moreover, the extensive experimental results presented here show that these responses vary significantly with Vt and well type. The measurements show that depending on the expected dose and transistor Vt used, TID-induced standby current (ISB) increases may have a substantial impact on overall power in spaceborne integrated circuits (ICs) using this fabrication process. The TID impact on digital circuit timing margins is also discussed.

Original languageEnglish (US)
Pages (from-to)2305-2313
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume69
Issue number12
DOIs
StatePublished - Dec 1 2022
Externally publishedYes

Keywords

  • Reliability assessment
  • ring oscillators (ROs)
  • silicon on insulator (SOI)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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