Abstract

Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge30 Se70 is not affected by a total dose exposure of up to 10 Mrad(Ge30 Se70).

Original languageEnglish (US)
Article number6678245
Pages (from-to)4563-4569
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number6
DOIs
StatePublished - Dec 2013

Keywords

  • Cation
  • ECM
  • PMC
  • ReRAM
  • chalcogenide glass
  • electrochemical metallization
  • memristors
  • nanoionic memory
  • photo-diffusion
  • photodoping
  • programmable metallization cell
  • radiation effects
  • resistive switching
  • total ionizing dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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