Abstract

Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge30 Se70 is not affected by a total dose exposure of up to 10 Mrad(Ge30 Se70).

Original languageEnglish (US)
Article number6678245
Pages (from-to)4563-4569
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number6
DOIs
StatePublished - Dec 2013

Fingerprint

Metallizing
Data storage equipment
dosage
cells
Electrolytes
Redox reactions
Ionizing radiation
electrolytes
solid state
Silver
Positive ions
ionizing radiation
Radiation
emerging
Electrodes
silver
cations
requirements
electrodes
radiation

Keywords

  • Cation
  • chalcogenide glass
  • ECM
  • electrochemical metallization
  • memristors
  • nanoionic memory
  • photo-diffusion
  • photodoping
  • PMC
  • programmable metallization cell
  • radiation effects
  • ReRAM
  • resistive switching
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells. / Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Dandamudi, P.; Chandran, A.; Holbert, Keith; Mitkova, M.; Ailavajhala, M.

In: IEEE Transactions on Nuclear Science, Vol. 60, No. 6, 6678245, 12.2013, p. 4563-4569.

Research output: Contribution to journalArticle

@article{2b0181598df84bfab8f77ddb58928979,
title = "Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells",
abstract = "Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge30 Se70 is not affected by a total dose exposure of up to 10 Mrad(Ge30 Se70).",
keywords = "Cation, chalcogenide glass, ECM, electrochemical metallization, memristors, nanoionic memory, photo-diffusion, photodoping, PMC, programmable metallization cell, radiation effects, ReRAM, resistive switching, total ionizing dose",
author = "{Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and P. Dandamudi and A. Chandran and Keith Holbert and M. Mitkova and M. Ailavajhala",
year = "2013",
month = "12",
doi = "10.1109/TNS.2013.2286318",
language = "English (US)",
volume = "60",
pages = "4563--4569",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Dandamudi, P.

AU - Chandran, A.

AU - Holbert, Keith

AU - Mitkova, M.

AU - Ailavajhala, M.

PY - 2013/12

Y1 - 2013/12

N2 - Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge30 Se70 is not affected by a total dose exposure of up to 10 Mrad(Ge30 Se70).

AB - Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge30Se70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge30 Se70 is not affected by a total dose exposure of up to 10 Mrad(Ge30 Se70).

KW - Cation

KW - chalcogenide glass

KW - ECM

KW - electrochemical metallization

KW - memristors

KW - nanoionic memory

KW - photo-diffusion

KW - photodoping

KW - PMC

KW - programmable metallization cell

KW - radiation effects

KW - ReRAM

KW - resistive switching

KW - total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=84891560843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891560843&partnerID=8YFLogxK

U2 - 10.1109/TNS.2013.2286318

DO - 10.1109/TNS.2013.2286318

M3 - Article

AN - SCOPUS:84891560843

VL - 60

SP - 4563

EP - 4569

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

M1 - 6678245

ER -