Abstract

Nanoionic based resistive switching memory cells are nowadays being implemented in novel memory technology known as Conductive Bridging Random Access Memory. These memory cells, known as programmable metallization cells, are a promising memory technology not only due to their scaling potential but also because of characteristics such as non-volatility, low-power operation and speed. Resistance switching in programmable metallization cells is related to the growth and dissolution of conductive metallic filaments in solid electrolytes. In this work, the effect of total ionizing dose on the solid-state electrolyte obtained after photodoping of chalcogenide based programmable metallization is investigated. Equivalent circuits of devices are extracted from impedance spectroscopy measurements and used to gain insights on the effect of ionizing radiation on these materials and structures.

Original languageEnglish (US)
Title of host publicationIEEE Aerospace Conference Proceedings
PublisherIEEE Computer Society
ISBN (Print)9781479916221
DOIs
StatePublished - 2014
Event2014 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 1 2014Mar 8 2014

Other

Other2014 IEEE Aerospace Conference
CountryUnited States
CityBig Sky, MT
Period3/1/143/8/14

Fingerprint

Metallizing
impedance
Data storage equipment
dosage
cells
electrolyte
random access memory
solid electrolytes
equivalent circuits
ionizing radiation
Ionizing radiation
Solid electrolytes
filaments
dissolving
Equivalent circuits
electrolytes
solid state
Dissolution
scaling
spectroscopy

ASJC Scopus subject areas

  • Aerospace Engineering
  • Space and Planetary Science

Cite this

Total-ionizing-dose effects on the impedance of silverdoped chalcogenide programmable metallization cells. / Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Holbert, Keith.

IEEE Aerospace Conference Proceedings. IEEE Computer Society, 2014. 6836470.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gonzalez Velo, Y, Barnaby, H, Kozicki, M & Holbert, K 2014, Total-ionizing-dose effects on the impedance of silverdoped chalcogenide programmable metallization cells. in IEEE Aerospace Conference Proceedings., 6836470, IEEE Computer Society, 2014 IEEE Aerospace Conference, Big Sky, MT, United States, 3/1/14. https://doi.org/10.1109/AERO.2014.6836470
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