In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.

Original languageEnglish (US)
Article number7592933
Pages (from-to)269-276
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2017


  • Chalcogenide glasses
  • SiO
  • gamma-ray radiation
  • non-volatile switching
  • programmable metallization cell (PMC)
  • selector device
  • total ionizing dose (TID)
  • volatile switching

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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