Abstract

In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.

Original languageEnglish (US)
Article number7592933
Pages (from-to)269-276
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number1
DOIs
StatePublished - Jan 1 2017

Fingerprint

selectors
Metallizing
Data storage equipment
Gamma rays
dosage
cells
Dosimetry
Irradiation
gamma rays
Radiation
high resistance
irradiation
thresholds
radiation

Keywords

  • Chalcogenide glasses
  • gamma-ray radiation
  • non-volatile switching
  • programmable metallization cell (PMC)
  • selector device
  • SiO
  • total ionizing dose (TID)
  • volatile switching

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors. / Chen, W.; Fang, R.; Barnaby, Hugh; Balaban, M. B.; Gonzalez Velo, Yago; Taggart, J. L.; Mahmud, A.; Holbert, Keith; Edwards, A. H.; Kozicki, Michael.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 1, 7592933, 01.01.2017, p. 269-276.

Research output: Contribution to journalArticle

Chen, W. ; Fang, R. ; Barnaby, Hugh ; Balaban, M. B. ; Gonzalez Velo, Yago ; Taggart, J. L. ; Mahmud, A. ; Holbert, Keith ; Edwards, A. H. ; Kozicki, Michael. / Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors. In: IEEE Transactions on Nuclear Science. 2017 ; Vol. 64, No. 1. pp. 269-276.
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