Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

W. Chen; R. Fang; Hugh Barnaby; M. B. Balaban; Yago Gonzalez Velo; J. L. Taggart; A. Mahmud; Keith Holbert; A. H. Edwards; Michael Kozicki

doi:10.1109/TNS.2016.2618359

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

W. Chen, R. Fang, Hugh Barnaby, M. B. Balaban, Yago Gonzalez Velo, J. L. Taggart, A. Mahmud, Keith Holbert, A. H. Edwards, Michael Kozicki

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge₃₀Se₇₀ devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO₂ devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge₃₀Se₇₀ memory devices degrade after gamma-ray exposure while they are well preserved in SiO₂ selector devices.

Original language	English (US)
Article number	7592933
Pages (from-to)	269-276
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2016.2618359
State	Published - Jan 2017

Keywords

Chalcogenide glasses
SiO
gamma-ray radiation
non-volatile switching
programmable metallization cell (PMC)
selector device
total ionizing dose (TID)
volatile switching

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2016.2618359

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@article{fe7a14e6fa1f4528a397a79b8fb88e23,

title = "Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors",

abstract = "In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.",

keywords = "Chalcogenide glasses, SiO, gamma-ray radiation, non-volatile switching, programmable metallization cell (PMC), selector device, total ionizing dose (TID), volatile switching",

author = "W. Chen and R. Fang and Hugh Barnaby and Balaban, {M. B.} and {Gonzalez Velo}, Yago and Taggart, {J. L.} and A. Mahmud and Keith Holbert and Edwards, {A. H.} and Michael Kozicki",

note = "Funding Information: This work was supported in part by the Defense Threat Reduction Agency under Grant HDTRA1-11-1-0055 and the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

month = jan,

doi = "10.1109/TNS.2016.2618359",

language = "English (US)",

volume = "64",

pages = "269--276",

journal = "IEEE Transactions on Nuclear Science",

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AU - Chen, W.

AU - Fang, R.

AU - Barnaby, Hugh

AU - Balaban, M. B.

AU - Gonzalez Velo, Yago

AU - Taggart, J. L.

AU - Mahmud, A.

AU - Holbert, Keith

AU - Edwards, A. H.

AU - Kozicki, Michael

N1 - Funding Information: This work was supported in part by the Defense Threat Reduction Agency under Grant HDTRA1-11-1-0055 and the Air Force Research Laboratory Det 8/RVKVE under Grant FA9452-13-1-0288. Publisher Copyright: © 2016 IEEE.

PY - 2017/1

Y1 - 2017/1

N2 - In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.

AB - In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.

KW - Chalcogenide glasses

KW - SiO

KW - gamma-ray radiation

KW - non-volatile switching

KW - programmable metallization cell (PMC)

KW - selector device

KW - total ionizing dose (TID)

KW - volatile switching

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Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Abstract

Keywords

ASJC Scopus subject areas

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