Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

Physics & Astronomy

• isolation 100%
• CMOS 94%
• dosage 69%
• oxides 65%
• integrated circuits 49%
• capacitors 45%
• shift registers 36%
• radiation effects 29%
• ionizing radiation 27%
• radiation damage 27%
• field effect transistors 20%
• defects 14%
• radiation 14%

Engineering & Materials Science

• Oxides 90%
• Paper capacitors 64%
• MOS capacitors 55%
• Radiation damage 52%
• CMOS integrated circuits 50%
• Ionizing radiation 49%
• Radiation effects 46%
• Shift registers 43%
• Integrated circuits 32%
• Radiation 27%
• Defects 24%
• Hot Temperature 16%
• Experiments 12%