Abstract
This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits.
Original language | English (US) |
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Pages (from-to) | 1142-1145 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 261 |
Issue number | 1-2 SPEC. ISS. |
DOIs | |
State | Published - Aug 2007 |
Keywords
- Interface traps
- MOS capacitors
- Oxide trapped charge
- Radiation
- Shallow trench isolation
- Shift registers
- Total ionizing dose
- n-Channel MOSFETs
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation