TY - JOUR
T1 - Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform
AU - Goley, Patrick S.
AU - Tzintzarov, George N.
AU - Zeinolabedinzadeh, Saeed
AU - Ildefonso, Adrian
AU - Motoki, Keisuke
AU - Jiang, Rong
AU - Zhang, En Xia
AU - Fleetwood, Daniel M.
AU - Zimmermann, Lars
AU - Kaynak, Mehmet
AU - Lischke, Stefan
AU - Mai, Christian
AU - Cressler, John D.
N1 - Funding Information:
Manuscript received July 13, 2018; revised October 29, 2018; accepted December 3, 2018. Date of publication December 6, 2018; date of current version January 17, 2019. This work was supported in part by the National Science Foundation Graduate Research Fellowship under Grant DGE-1650044 and in part by the Defense Threat Reduction Agency under Grant HDTRA-11710053.
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to ionizing radiation from a 10-keV X-ray source to investigate total ionizing dose effects. Existing work on radiation effects in PDs, which is almost entirely based on normal-incidence PDs (rather than WG-integrated PDs), is reviewed to provide context and a framework for understanding the measurement results. Back-end-of-line considerations suggest the enhancement of the ionizing dose due to high-Z materials near the PD. PD performance was characterized in terms of dark current, S-parameters, dc photocurrent response, and optical-to-electrical conversion frequency response, shortly before and after irradiation. No significant degradation was observed, indicating that these devices may be suitable for applications in harsh radiation environments.
AB - Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to ionizing radiation from a 10-keV X-ray source to investigate total ionizing dose effects. Existing work on radiation effects in PDs, which is almost entirely based on normal-incidence PDs (rather than WG-integrated PDs), is reviewed to provide context and a framework for understanding the measurement results. Back-end-of-line considerations suggest the enhancement of the ionizing dose due to high-Z materials near the PD. PD performance was characterized in terms of dark current, S-parameters, dc photocurrent response, and optical-to-electrical conversion frequency response, shortly before and after irradiation. No significant degradation was observed, indicating that these devices may be suitable for applications in harsh radiation environments.
KW - Integrated photonics
KW - optoelectronic devices
KW - photodiodes (PDs)
KW - radiation effects
KW - silicon (Si) photonics
KW - total ionizing dose (TID)
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U2 - 10.1109/TNS.2018.2885327
DO - 10.1109/TNS.2018.2885327
M3 - Article
AN - SCOPUS:85058139767
SN - 0018-9499
VL - 66
SP - 125
EP - 133
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 1
M1 - 8565943
ER -