Abstract

The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

Original languageEnglish (US)
Article number183507
JournalApplied Physics Letters
Volume104
Issue number18
DOIs
StatePublished - May 5 2014

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random access memory
filaments
rays
dosage
irradiation
radiation
photoelectron spectroscopy
gamma rays
degradation
cycles
pulses
x rays
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory. / Fang, Runchen; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith; Kozicki, Michael; Barnaby, Hugh; Yu, Shimeng.

In: Applied Physics Letters, Vol. 104, No. 18, 183507, 05.05.2014.

Research output: Contribution to journalArticle

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AU - Fang, Runchen

AU - Gonzalez Velo, Yago

AU - Chen, Wenhao

AU - Holbert, Keith

AU - Kozicki, Michael

AU - Barnaby, Hugh

AU - Yu, Shimeng

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AB - The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

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