Abstract

The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO2) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

Original languageEnglish (US)
Article number183507
JournalApplied Physics Letters
Volume104
Issue number18
DOIs
StatePublished - May 5 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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