Total dose radiation effect simulations on a high-precision data acquisition system

Esko Mikkola, Bert Vermeire, Terence Chiu, Hugh Barnaby, H. G. Parks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A novel method to evaluate total dose radiation response on large mixed signal circuits is described. The method is based on partly behavioral, partly structural simulation on the VHDL-AMS language. Results obtained with the developed simulation method are compared to total dose testing results of an embedded high-precision data acquisition system. The system was total dose tested until functional failure in a Cobalt-60 irradiation chamber. Photoemission microscopy (PEM) analysis showed severe TID induced leakage currents inside the 1.2 kbyte SRAM memory sub-system. The SRAM sub-system was TID simulated with the developed method, and the results were compared to the irradiation test results. The simulation results suggest that the drain-to-source leakage currents inside the SRAM sub-system might not be the only cause for the system failure.

Original languageEnglish (US)
Title of host publication2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007
DOIs
StatePublished - Dec 1 2007
Event2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007 - Deauville, France
Duration: Sep 10 2007Sep 14 2007

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other2007 9th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2007
CountryFrance
CityDeauville
Period9/10/079/14/07

Keywords

  • Behavioral modeling
  • CMOS
  • Mixed signal circuits
  • Radiation effects
  • Total ionizing dose (TID)
  • VHDLAMS

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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