Total dose effects in linear bipolar integrated circuits

Research output: Contribution to journalReview articlepeer-review

7 Scopus citations

Abstract

Electronics systems that operate in space or strategic environments can be severely damaged by exposure to ionizing radiation. Space-based systems that utilize linear bipolar integrated circuits are particularly susceptible to radiation-induced damage because of the enhanced sensitivity of these circuits to the low rate of radiation exposure. The phenomenon of enhanced low-dose-rate sensitivity (ELDRS) demonstrates the need for a comprehensive understanding of the mechanisms of total dose effects in linear bipolar circuits. The majority of detailed bipolar total dose studies to date have focused on radiation effects mechanisms at either the process or transistor level. The goal of this text is to provide an overview of total dose mechanisms from the circuit perspective; in particular, the effects of transistor gain degradation on specific linear bipolar circuit parameters and the effects of circuit parameter degradation on select linear bipolar circuit applications.

Original languageEnglish (US)
Pages (from-to)519-541
Number of pages23
JournalInternational Journal of High Speed Electronics and Systems
Volume14
Issue number2
DOIs
StatePublished - Jun 2004
Externally publishedYes

Keywords

  • Base current
  • Bipolar junction transistor
  • Co-60 γ-rays
  • Current gain
  • Enhanced low-dose-rate sensitivity
  • Irradiation bias
  • Linear bipolar circuit
  • Operational amplifier
  • Total ionizing dose
  • Voltage comparator
  • Voltage regulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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