Topological signatures of medium range order in amorphous semiconductor models

Michael Treacy, P. M. Voyles, J. M. Gibson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The crystalline regions in the models of disordered tetrahedral semiconductors were detected through topological local cluster concept of Marians and Hobbs. Simple algorithms were presented to detect both Wells-type shortest circuits and O'Keefe-type rings which was used to delineate alternative forms of the Schlafli cluster in models. Identical Schlafli clusters were yielded for both polycrystalline topologies which were cubic and hexagonal diamond like frameworks.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, H.M. Branz, M. Stutzmann, S. Guha, H. Okamoto
Volume609
StatePublished - 2000
Externally publishedYes
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: Apr 24 2000Apr 28 2000

Other

OtherAmorphous and Heterogeneus Silicon Thin Films-2000
CountryUnited States
CitySan Francisco, CA
Period4/24/004/28/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Treacy, M., Voyles, P. M., & Gibson, J. M. (2000). Topological signatures of medium range order in amorphous semiconductor models. In R. W. Collins, H. M. Branz, M. Stutzmann, S. Guha, & H. Okamoto (Eds.), Materials Research Society Symposium - Proceedings (Vol. 609)