Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates

X. Liu, David Smith, J. Fan, Yong-Hang Zhang, H. Cao, Y. P. Chen, B. J. Kirby, N. Sun, S. T. Ruggiero, J. Leiner, R. E. Pimpinella, J. Hagmann, K. Tivakornsasithorn, M. Dobrowolska, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.

Original languageEnglish (US)
Title of host publication15th International Conference on Narrow Gap Systems, NGS15
Number of pages4
StatePublished - 2011
Event15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States
Duration: Aug 1 2011Aug 5 2011

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Other15th International Conference on Narrow Gap Systems, NGS15
CountryUnited States
CityBlacksburg, VA


  • MBE
  • Magnetotransport
  • Raman
  • TEM
  • Topological Insulators
  • XRD

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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