Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells

Attachai Ueranantasun, Bryce S. Richards, Christiana Honsberg, Jeffrey E. Cotter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The application of titanium dioxide (TiO2) films as a phosphorus diffusion barrier is investigated. The purpose is to study the possibility of using TiO2 to replace thermally grown silicon dioxide (SiO 2) as a phosphorus diffusion barrier to allow the formation of a selective emitter in the buried contact (BC) solar cell processing. The TiO 2 films are deposited on silicon wafers at 450°C before phosphorus (POCl3) diffusion. The result shows that TiO2 is a potential diffusion barrier, as the resistivity under the masked regions is as high as 800 Omega;?/sq. However, the scanning electron microscopic (SEM) images reveal that there is a significant change in surface morphology of the films when phosphorus is involved in the process. This morphology change compared to other sintering gases is also discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1411-1414
Number of pages4
VolumeB
Publication statusPublished - 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ueranantasun, A., Richards, B. S., Honsberg, C., & Cotter, J. E. (2003). Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion (Vol. B, pp. 1411-1414)