Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering