Titanium Silicide Contacts on Semiconducting Diamond Substrates

T. P. Humphreys, J. V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill

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Abstract

Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

Original languageEnglish (US)
Pages (from-to)1515-1516
Number of pages2
JournalElectronics Letters
Volume27
Issue number17
DOIs
StatePublished - Jun 20 1991

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Keywords

  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Humphreys, T. P., Labrasca, J. V., Nemanich, R. J., Das, K., & Posthill, J. B. (1991). Titanium Silicide Contacts on Semiconducting Diamond Substrates. Electronics Letters, 27(17), 1515-1516. https://doi.org/10.1049/el:19910952