Titanium Silicide Contacts on Semiconducting Diamond Substrates

T. P. Humphreys; J. V. Labrasca; R. J. Nemanich; K. Das; J. B. Posthill

doi:10.1049/el:19910952

Titanium Silicide Contacts on Semiconducting Diamond Substrates

T. P. Humphreys, J. V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10_-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

Original language	English (US)
Pages (from-to)	1515-1516
Number of pages	2
Journal	Electronics Letters
Volume	27
Issue number	17
DOIs	https://doi.org/10.1049/el:19910952
State	Published - Jun 20 1991
Externally published	Yes

Keywords

Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19910952

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title = "Titanium Silicide Contacts on Semiconducting Diamond Substrates",

abstract = "Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.",

keywords = "Semiconductor devices and materials",

author = "Humphreys, {T. P.} and Labrasca, {J. V.} and Nemanich, {R. J.} and K. Das and Posthill, {J. B.}",

year = "1991",

month = jun,

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doi = "10.1049/el:19910952",

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T1 - Titanium Silicide Contacts on Semiconducting Diamond Substrates

AU - Humphreys, T. P.

AU - Labrasca, J. V.

AU - Nemanich, R. J.

AU - Das, K.

AU - Posthill, J. B.

PY - 1991/6/20

Y1 - 1991/6/20

N2 - Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

AB - Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the code position of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of ~10-6Torr for 30min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

KW - Semiconductor devices and materials

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Titanium Silicide Contacts on Semiconducting Diamond Substrates

Abstract

Keywords

ASJC Scopus subject areas

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