Titanium silicide contacts on semiconducting diamond substrates

T. P. Humphreys, J. V. Labrasca, Robert Nemanich, K. Das, J. B. Posthill

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of approximately 10-6 Torr for 30 min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

Original languageEnglish (US)
Pages (from-to)1515-1516
Number of pages2
JournalElectronics Letters
Volume27
Issue number17
StatePublished - Jan 1 1991
Externally publishedYes

Fingerprint

Semiconducting diamonds
Titanium
Substrates
Electric potential
Electron beams
Diamonds
Evaporation
Vacuum
Annealing
Silicon
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Humphreys, T. P., Labrasca, J. V., Nemanich, R., Das, K., & Posthill, J. B. (1991). Titanium silicide contacts on semiconducting diamond substrates. Electronics Letters, 27(17), 1515-1516.

Titanium silicide contacts on semiconducting diamond substrates. / Humphreys, T. P.; Labrasca, J. V.; Nemanich, Robert; Das, K.; Posthill, J. B.

In: Electronics Letters, Vol. 27, No. 17, 01.01.1991, p. 1515-1516.

Research output: Contribution to journalArticle

Humphreys, TP, Labrasca, JV, Nemanich, R, Das, K & Posthill, JB 1991, 'Titanium silicide contacts on semiconducting diamond substrates', Electronics Letters, vol. 27, no. 17, pp. 1515-1516.
Humphreys TP, Labrasca JV, Nemanich R, Das K, Posthill JB. Titanium silicide contacts on semiconducting diamond substrates. Electronics Letters. 1991 Jan 1;27(17):1515-1516.
Humphreys, T. P. ; Labrasca, J. V. ; Nemanich, Robert ; Das, K. ; Posthill, J. B. / Titanium silicide contacts on semiconducting diamond substrates. In: Electronics Letters. 1991 ; Vol. 27, No. 17. pp. 1515-1516.
@article{c2ee5a11559448eb9792197b7c3d65dd,
title = "Titanium silicide contacts on semiconducting diamond substrates",
abstract = "Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of approximately 10-6 Torr for 30 min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.",
author = "Humphreys, {T. P.} and Labrasca, {J. V.} and Robert Nemanich and K. Das and Posthill, {J. B.}",
year = "1991",
month = "1",
day = "1",
language = "English (US)",
volume = "27",
pages = "1515--1516",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "17",

}

TY - JOUR

T1 - Titanium silicide contacts on semiconducting diamond substrates

AU - Humphreys, T. P.

AU - Labrasca, J. V.

AU - Nemanich, Robert

AU - Das, K.

AU - Posthill, J. B.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of approximately 10-6 Torr for 30 min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

AB - Titanium silicide contacts have been deposited on semiconducting (p-type) natural diamond substrates by the codeposition of silicon and titanium by electron-beam evaporation. Current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics. Consistent with the observed small turn-on voltage, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behaviour. However, on subsequent annealing of the titanium silicide contacts at 1100°C in a vacuum of approximately 10-6 Torr for 30 min, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

UR - http://www.scopus.com/inward/record.url?scp=0026205406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026205406&partnerID=8YFLogxK

M3 - Article

VL - 27

SP - 1515

EP - 1516

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -