Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

James E. Burnette; Sharon Kiesel; Dale E. Sayers; Robert J. Nemanich

doi:10.1016/j.tsf.2007.08.045

Titanium Interlayer Mediated Epitaxy of CoSi₂ on Si_1-xGe_x

James E. Burnette, Sharon Kiesel, Dale E. Sayers, Robert J. Nemanich

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Titanium Interlayer Mediated Epitaxy (TIME) has been shown to promote the formation of epitaxial CoSi₂ on Si (100). Similarities between Si and Si_1-xGe_x alloys have motivated a study of whether the TIME process could be successful in forming epitaxial CoSi₂ on Si_1-xGe_x. Titanium layers of varying thickness were deposited as interlayers between a Co layer and c-Si/Si_0.8Ge_0.2 grown epitaxially onto Si (100) to investigate their role in the formation of epitaxial CoSi₂ on Si_1-xGe_x alloys. The effect of Ti interlayer thickness on the orientation of CoSi₂ to the Si_1-xGe_x substrate, and the conditions under which a polycrystalline CoSi₂ film has been formed have been studied. It was found that Ti was beneficial in promoting epitaxy to the substrate in all cases. The experimental results indicate that with a Ti interlayer thickness of ∼ 50 Å, the formation of epitaxial CoSi₂ adjacent to the substrate was achieved, and pinhole formation was minimized. It was also observed that for increased interlayer thickness, Ti reacted with Si to form a titanium silicide.

Original language	English (US)
Pages (from-to)	1809-1817
Number of pages	9
Journal	Thin Solid Films
Volume	516
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2007.08.045
State	Published - Feb 29 2008
Externally published	Yes

Keywords

CoSi
Epitaxy
Pinhole formation
SiGe
TIME process
Ti interlayer
XANES
XRD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.08.045

Cite this

@article{8da868d0eb874c469c64c5c5c0e25a84,

title = "Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex",

abstract = "Titanium Interlayer Mediated Epitaxy (TIME) has been shown to promote the formation of epitaxial CoSi2 on Si (100). Similarities between Si and Si1-xGex alloys have motivated a study of whether the TIME process could be successful in forming epitaxial CoSi2 on Si1-xGex. Titanium layers of varying thickness were deposited as interlayers between a Co layer and c-Si/Si0.8Ge0.2 grown epitaxially onto Si (100) to investigate their role in the formation of epitaxial CoSi2 on Si1-xGex alloys. The effect of Ti interlayer thickness on the orientation of CoSi2 to the Si1-xGex substrate, and the conditions under which a polycrystalline CoSi2 film has been formed have been studied. It was found that Ti was beneficial in promoting epitaxy to the substrate in all cases. The experimental results indicate that with a Ti interlayer thickness of ∼ 50 {\AA}, the formation of epitaxial CoSi2 adjacent to the substrate was achieved, and pinhole formation was minimized. It was also observed that for increased interlayer thickness, Ti reacted with Si to form a titanium silicide.",

keywords = "CoSi, Epitaxy, Pinhole formation, SiGe, TIME process, Ti interlayer, XANES, XRD",

author = "Burnette, {James E.} and Sharon Kiesel and Sayers, {Dale E.} and Nemanich, {Robert J.}",

note = "Funding Information: The authors would like to thank Franz Koeck for his assistance in generating the SEM micrographs. This work was supported through funding from the National Science Foundation under Contract number DMR-0102652 and DMR-0512591, the Department of Energy under Contract DE-FG05-93ER79236 and DE-FG05-89ER45384, and the GAANN Fellowship under the U.S. Department of Education. Research was partly done at beamline X-11A at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory. The NSLS is supported by the U.S. Department of Energy, Division of Materials Science and Division of Chemical Science.",

year = "2008",

month = feb,

day = "29",

doi = "10.1016/j.tsf.2007.08.045",

language = "English (US)",

volume = "516",

pages = "1809--1817",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

AU - Burnette, James E.

AU - Kiesel, Sharon

AU - Sayers, Dale E.

AU - Nemanich, Robert J.

N1 - Funding Information: The authors would like to thank Franz Koeck for his assistance in generating the SEM micrographs. This work was supported through funding from the National Science Foundation under Contract number DMR-0102652 and DMR-0512591, the Department of Energy under Contract DE-FG05-93ER79236 and DE-FG05-89ER45384, and the GAANN Fellowship under the U.S. Department of Education. Research was partly done at beamline X-11A at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory. The NSLS is supported by the U.S. Department of Energy, Division of Materials Science and Division of Chemical Science.

PY - 2008/2/29

Y1 - 2008/2/29

N2 - Titanium Interlayer Mediated Epitaxy (TIME) has been shown to promote the formation of epitaxial CoSi2 on Si (100). Similarities between Si and Si1-xGex alloys have motivated a study of whether the TIME process could be successful in forming epitaxial CoSi2 on Si1-xGex. Titanium layers of varying thickness were deposited as interlayers between a Co layer and c-Si/Si0.8Ge0.2 grown epitaxially onto Si (100) to investigate their role in the formation of epitaxial CoSi2 on Si1-xGex alloys. The effect of Ti interlayer thickness on the orientation of CoSi2 to the Si1-xGex substrate, and the conditions under which a polycrystalline CoSi2 film has been formed have been studied. It was found that Ti was beneficial in promoting epitaxy to the substrate in all cases. The experimental results indicate that with a Ti interlayer thickness of ∼ 50 Å, the formation of epitaxial CoSi2 adjacent to the substrate was achieved, and pinhole formation was minimized. It was also observed that for increased interlayer thickness, Ti reacted with Si to form a titanium silicide.

AB - Titanium Interlayer Mediated Epitaxy (TIME) has been shown to promote the formation of epitaxial CoSi2 on Si (100). Similarities between Si and Si1-xGex alloys have motivated a study of whether the TIME process could be successful in forming epitaxial CoSi2 on Si1-xGex. Titanium layers of varying thickness were deposited as interlayers between a Co layer and c-Si/Si0.8Ge0.2 grown epitaxially onto Si (100) to investigate their role in the formation of epitaxial CoSi2 on Si1-xGex alloys. The effect of Ti interlayer thickness on the orientation of CoSi2 to the Si1-xGex substrate, and the conditions under which a polycrystalline CoSi2 film has been formed have been studied. It was found that Ti was beneficial in promoting epitaxy to the substrate in all cases. The experimental results indicate that with a Ti interlayer thickness of ∼ 50 Å, the formation of epitaxial CoSi2 adjacent to the substrate was achieved, and pinhole formation was minimized. It was also observed that for increased interlayer thickness, Ti reacted with Si to form a titanium silicide.

KW - CoSi

KW - Epitaxy

KW - Pinhole formation

KW - SiGe

KW - TIME process

KW - Ti interlayer

KW - XANES

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=38649108159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38649108159&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.08.045

DO - 10.1016/j.tsf.2007.08.045

M3 - Article

AN - SCOPUS:38649108159

SN - 0040-6090

VL - 516

SP - 1809

EP - 1817

JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -