Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions

D. B. Aldrich, Y. L. Chen, D. E. Sayers, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The effect of Si 1-xGe x alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si 1-xGe x solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi 2 is followed, at higher temperatures, by the formation of C54 TiSi 2. For the Ti-Ge reaction the initial formation of Ti 6Ge 5 is followed, at higher temperatures, by the formation of C54 TiGe 2. It was determined that the Ti-Si 1-xGe x reaction follows three different reaction paths depending on the composition of the initial Si 1-xGe x alloy. For Si rich Si 1-xGe x alloys the Ti-Si 1-xGe x reaction follows a 'Ti-Si like' reaction path (Ti+M → C49 TiM 2 → C54 TiM 2, where M = Si 1-xGe x). For Ge rich Si 1-xGe x alloys the reaction follows a 'Ti-Ge like' reaction path (Ti+M → Ti 6M 5 → C54 TiM 2). Both Ti 6M 5 and C49 TiM 2 form during the reaction of titanium with Si 1-xGe x alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the 'Ti-Si like' reaction and discontinuous islanded C54 titanium germanosilicide forms during the 'Ti-Ge like' reaction. An optimum Si 1-xGe x alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous-low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si 1-xGe x alloy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages405-410
Number of pages6
Volume402
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period11/27/9511/30/95

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Titanium
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Aldrich, D. B., Chen, Y. L., Sayers, D. E., & Nemanich, R. (1996). Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions In Materials Research Society Symposium - Proceedings (Vol. 402, pp. 405-410). Materials Research Society.

Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions . / Aldrich, D. B.; Chen, Y. L.; Sayers, D. E.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. Vol. 402 Materials Research Society, 1996. p. 405-410.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aldrich, DB, Chen, YL, Sayers, DE & Nemanich, R 1996, Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions in Materials Research Society Symposium - Proceedings. vol. 402, Materials Research Society, pp. 405-410, Proceedings of the 1995 MRS Fall Symposium, Boston, MA, USA, 11/27/95.
Aldrich DB, Chen YL, Sayers DE, Nemanich R. Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions In Materials Research Society Symposium - Proceedings. Vol. 402. Materials Research Society. 1996. p. 405-410
Aldrich, D. B. ; Chen, Y. L. ; Sayers, D. E. ; Nemanich, Robert. / Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions Materials Research Society Symposium - Proceedings. Vol. 402 Materials Research Society, 1996. pp. 405-410
@inproceedings{15e0109390704bdd99d2c00ec1c800e4,
title = "Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions",
abstract = "The effect of Si 1-xGe x alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si 1-xGe x solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi 2 is followed, at higher temperatures, by the formation of C54 TiSi 2. For the Ti-Ge reaction the initial formation of Ti 6Ge 5 is followed, at higher temperatures, by the formation of C54 TiGe 2. It was determined that the Ti-Si 1-xGe x reaction follows three different reaction paths depending on the composition of the initial Si 1-xGe x alloy. For Si rich Si 1-xGe x alloys the Ti-Si 1-xGe x reaction follows a 'Ti-Si like' reaction path (Ti+M → C49 TiM 2 → C54 TiM 2, where M = Si 1-xGe x). For Ge rich Si 1-xGe x alloys the reaction follows a 'Ti-Ge like' reaction path (Ti+M → Ti 6M 5 → C54 TiM 2). Both Ti 6M 5 and C49 TiM 2 form during the reaction of titanium with Si 1-xGe x alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the 'Ti-Si like' reaction and discontinuous islanded C54 titanium germanosilicide forms during the 'Ti-Ge like' reaction. An optimum Si 1-xGe x alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous-low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si 1-xGe x alloy.",
author = "Aldrich, {D. B.} and Chen, {Y. L.} and Sayers, {D. E.} and Robert Nemanich",
year = "1996",
language = "English (US)",
volume = "402",
pages = "405--410",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Titanium germanosilicide phase formation during the Ti-Si 1-xGe x solid phase reactions

AU - Aldrich, D. B.

AU - Chen, Y. L.

AU - Sayers, D. E.

AU - Nemanich, Robert

PY - 1996

Y1 - 1996

N2 - The effect of Si 1-xGe x alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si 1-xGe x solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi 2 is followed, at higher temperatures, by the formation of C54 TiSi 2. For the Ti-Ge reaction the initial formation of Ti 6Ge 5 is followed, at higher temperatures, by the formation of C54 TiGe 2. It was determined that the Ti-Si 1-xGe x reaction follows three different reaction paths depending on the composition of the initial Si 1-xGe x alloy. For Si rich Si 1-xGe x alloys the Ti-Si 1-xGe x reaction follows a 'Ti-Si like' reaction path (Ti+M → C49 TiM 2 → C54 TiM 2, where M = Si 1-xGe x). For Ge rich Si 1-xGe x alloys the reaction follows a 'Ti-Ge like' reaction path (Ti+M → Ti 6M 5 → C54 TiM 2). Both Ti 6M 5 and C49 TiM 2 form during the reaction of titanium with Si 1-xGe x alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the 'Ti-Si like' reaction and discontinuous islanded C54 titanium germanosilicide forms during the 'Ti-Ge like' reaction. An optimum Si 1-xGe x alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous-low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si 1-xGe x alloy.

AB - The effect of Si 1-xGe x alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si 1-xGe x solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi 2 is followed, at higher temperatures, by the formation of C54 TiSi 2. For the Ti-Ge reaction the initial formation of Ti 6Ge 5 is followed, at higher temperatures, by the formation of C54 TiGe 2. It was determined that the Ti-Si 1-xGe x reaction follows three different reaction paths depending on the composition of the initial Si 1-xGe x alloy. For Si rich Si 1-xGe x alloys the Ti-Si 1-xGe x reaction follows a 'Ti-Si like' reaction path (Ti+M → C49 TiM 2 → C54 TiM 2, where M = Si 1-xGe x). For Ge rich Si 1-xGe x alloys the reaction follows a 'Ti-Ge like' reaction path (Ti+M → Ti 6M 5 → C54 TiM 2). Both Ti 6M 5 and C49 TiM 2 form during the reaction of titanium with Si 1-xGe x alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the 'Ti-Si like' reaction and discontinuous islanded C54 titanium germanosilicide forms during the 'Ti-Ge like' reaction. An optimum Si 1-xGe x alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous-low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si 1-xGe x alloy.

UR - http://www.scopus.com/inward/record.url?scp=0029779045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029779045&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029779045

VL - 402

SP - 405

EP - 410

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -